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参数资料
| 型号： | C8051F983-GM |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 4KB FLASH 20QFN |
| 产品培训模块： | C8051F9xx Lower Power MCUs Serial Communication Overview |
| 视频文件： | Designing for Low Power Operation |
| 特色产品： | C8051F91x/0x MCU Series Development Kit C8051F98x and C8051F99x Low-Power MCU’s |
| 标准包装： | 122 |
| 系列： | C8051F9xx |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 25MHz |
| 连通性： | SMBus（2 线/I²C），SPI，UART/USART |
| 外围设备： | 欠压检测/复位，POR，PWM，WDT |
| 输入/输出数： | 16 |
| 程序存储器容量： | 4KB（4K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 512 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 20-UFQFN 裸露焊盘 |
| 包装： | 管件 |
| 其它名称： | 336-1950-5 |
400 West Cesar Chavez, Austin, TX 78701 www.silabs.com
6.
Writes to CRC0CN that Initiate a CRC0 Operation
Description: The third op-code byte fetched from program memory following a write to CRC0CN that initiates
a CRC0 operation is indeterminate.
Impacts: If the indeterminate op-code byte is the first or second byte in an instruction, improper code
execution may result.
Workaround: Writes to CRC0CN that initiate a CRC0 operation must be immediately followed by a benign 3-
byte instruction whose third byte is a “don’t care.” An example of such an instruction is the write of a dummy
value to the CRC0FLIP register using a 3-byte MOV instruction. The value written to CRC0FLIP will be
indeterminate, but this should have no effect on the system. To ensure that both instructions are executed
without interruption, global interrupts should be disabled.
Note: When programming in C, the dummy value written to CRC0FLIP should be a non-zero value. This
prevents the compiler from generating the following instruction sequence:
CLR A
MOV CRC0FLIP, A
When programming in C, the disassembly should be checked to ensure the compiler generated the following
instruction sequence:
MOV CRC0FLIP, #AAh where #AAh is the non-zero dummy value.
Resolution: Fixed in Rev B and later.
7.
Address 0x0000 of XRAM
Description: On device reset, or upon waking up from Sleep mode, address 0x0000 of external memory
may be overwritten by an indeterminate value. The indeterminate value is 0x00 in most situations.
Impacts: Application data stored at 0x0000 in external memory may be overwritten upon reset or waking up
from sleep mode.
Workaround: A dummy variable should be placed at address 0x0000 in external memory to ensure that the
application software does not store any data that needs to be retained during sleep or reset at this memory
location. The compiler-independent example below shows how to locate a dummy variable at address
0x0000 in external memory.
LOCATED_VARIABLE_NO_INIT (reserved, U8, SEG_XDATA, 0x0000);
Compiler-independent code requires the use of the compiler_defs.h and c8051F990_defs.h header files
supplied in the C:\Silabs\MCU\INC folder after installation of the Silicon Laboratories IDE.
Resolution: This information will be added to the device data sheet.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| C8051F983GMR | 制造商:Silicon Laboratories Inc 功能描述: |
| C8051F983-GMR | 功能描述:8位微控制器 -MCU 4kB 512B RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| C8051F985 | 制造商:SILABS 制造商全称:SILABS 功能描述:25 MIPS, 8 kB Flash, Ultra Low Power, Capacitive Sensing MCU |
| C8051F985-C-GM | 功能描述:CIP-51 8051 C8051F9xx Microcontroller IC 8-Bit 25MHz 2KB (2K x 8) FLASH 20-QFN (3x3) 制造商:silicon labs 系列:C8051F9xx 包装:管件 零件状态:有效 核心处理器:CIP-51 8051 核心尺寸:8-位 速度:25MHz 连接性:SMBus（2 线/I2C），SPI，UART/USART 外设:欠压检测/复位，POR，PWM，WDT I/O 数:16 程序存储容量:2KB（2K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:512 x 8 电压 - 电源（Vcc/Vdd）:1.8 V ~ 3.6 V 数据转换器:- 振荡器类型:内部 工作温度:-40°C ~ 85°C（TA） 封装/外壳:20-UFQFN 裸露焊盘 供应商器件封装:20-QFN（3x3） 标准包装:100 |
| C8051F985-C-GMR | 功能描述:IC MCU 8BIT 2KB FLASH 20QFN 制造商:silicon labs 系列:C8051F9xx 包装:剪切带（CT） 零件状态:在售 核心处理器:CIP-51 8051 核心尺寸:8-位 速度:25MHz 连接性:SMBus（2 线/I2C），SPI，UART/USART 外设:欠压检测/复位，POR，PWM，WDT I/O 数:16 程序存储容量:2KB（2K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:512 x 8 电压 - 电源（Vcc/Vdd）:1.8 V ~ 3.6 V 数据转换器:- 振荡器类型:内部 工作温度:-40°C ~ 85°C（TA） 封装/外壳:20-UFQFN 裸露焊盘 供应商器件封装:20-QFN（3x3） 标准包装:1 |
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