参数资料
| 型号： | CA3102M |
| 厂商： | Intersil |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP DUAL HI FREQ 14-SOIC |
| 标准包装： | 50 |
| 放大器类型： | 差分 |
| 电路数： | 2 |
| 增益带宽积： | 1.35GHz |
| 电流 - 输入偏压： | 13.5µA |
| 电压 - 输入偏移： | 250µV |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 管件 |
2
611.7
October 12, 2005
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
205
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
Input Offset Voltage (Figures 1, 4)
VIO
-
0.25
5.0
mV
Input Offset Current (Figure 1)
IIO
I3 = I9 = 2mA
-
0.3
3.0
μA
Input Bias Current (Figures 1, 5)
IB
-
13.5
33
μA
Temperature Coefficient
Magnitude of Input Offset Voltage
-1.1
-
μV/oC
DC CHARACTERISTICS FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 6)
VBE
VCE = 6V, IC = 1mA
674
774
874
mV
Temperature Coefficient of
Base-to-Emitter Voltage
(Figure 6)
VCE = 6V, IC = 1mA
-
-0.9
-
mV/oC
Collector Cutoff Current (Figure 7)
ICBO
VCB = 10V, IE = 0
-
0.0013
100
nA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10μA, IE = 0
20
60
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC = 10μA, IB = IE = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10μA, IC = 0
5
7
-
V
DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
1/f Noise Figure (For Single Transistor)
(Figure 12)
NF
f = 100kHz, RS = 500Ω,
IC = 1mA
-1.5
-
dB
Gain Bandwidth Product (For Single
Transistor) (Figure 11)
fT
VCE = 6V, IC = 5mA
-
1.35
-
GHz
Collector-Base Capacitance (Figure 8)
CCB
IC = 0,
VCB = 5V
Note 3
-
0.28
-
pF
Note 4
-
0.15
-
pF
Collector-Substrate
Capacitance (Figure 8)
CCI
IC = 0, VCI = 5V
-
1.65
-
pF
Common Mode Rejection Ratio
CMRR
I3 = I9 = 2mA
-
100
-
dB
AGC Range, One Stage (Figure 2)
AGC
Bias Voltage = -6V
-
75
-
dB
Voltage Gain, Single-Ended Output
(Figures 2, 9, 10)
A
Bias Voltage = -4.2V,
f = 10MHz
18
22
-
dB
ΔV
IO
ΔT
----------------
ΔV
BE
ΔT
---------------
CA3102
相关PDF资料 |
PDF描述 |
|---|---|
| TA35-C147F050C0 | CIRCUIT BRKR THERMAL 5A 2POLE |
| TA35-C127F050C0 | CIRCUIT BRKR THERMAL 5A 2POLE |
| TA35-C123F150C0 | CIRCUIT BRKR THERMAL 15A 2POLE |
| 44769-1002 | CONN HDR RCPT 10POS 3MM VERT PCB |
| TA35-C123F100C0 | CIRCUIT BRKR THERMAL 10A 2POLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CA3102M96 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CA3102MZ | 功能描述:IC OP AMP DUAL HI FREQ 14-SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:2pA 电压 - 输入偏移:1000µV 电流 - 电源:85µA 电流 - 输出 / 通道:20mA 电压 - 电源，单路/双路(±):1.8 V ~ 6 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOICN 包装:剪切带 (CT) 产品目录页面:680 (CN2011-ZH PDF) 其它名称:MCP6L04T-E/SLCT |
| CA3102R10SL-3P | 功能描述:CONN RCPT 3 POS BOX MNT W/PINS RoHS:否 类别:连接器，互连式 >> 圆形 系列:MIL-DTL-5015, CA 标准包装:1 系列:0B 连接器类型:插座，母形插口 位置数:3 外壳尺寸 - 插件:303 外壳尺寸，MIL:- 安装类型:面板安装，隔墙式（后端螺母） 端子:焊杯 紧固型:推挽式 方向:G 防护等级:- 外壳材料，表面处理:黄铜，镍上镀铬 触点表面涂层:金 特点:屏蔽 包装:散装 触点涂层厚度:- 额定电流:7A 电压 - 额定:- 工作温度:-55°C ~ 250°C 其它名称:Q6787373 |
| CA3102R10SL-3PA176 | 功能描述:CONN RCPT 3 POS BOX MNT W/PINS RoHS:否 类别:连接器，互连式 >> 圆形 系列:MIL-DTL-5015, CA 标准包装:1 系列:MIL-DTL-5015, CT 连接器类型:插座，母形插口 位置数:5 外壳尺寸 - 插件:14S-5 外壳尺寸，MIL:- 安装类型:面板安装，法兰 端子:压接 紧固型:有螺纹 方向:N（正常型） 防护等级:抗环境影响 外壳材料，表面处理:铝，镀草绿色镉 触点表面涂层:金 特点:- 包装:散装 触点涂层厚度:- 额定电流:- 电压 - 额定:200VAC，250VDC 工作温度:-55°C ~ 125°C 配套产品:ICT6E14S-5PCAU-ND - CONN PLUG 5POS STRAIGHT W/PINS 其它名称:ICT2-14S-5SCAU |
| CA3102R10SL-3P-A176 | 制造商:ITT Interconnect Solutions 功能描述:CA3102R10SL-3P-A176 / 121001-0270 R / Circular |
发布紧急采购，3分钟左右您将得到回复。