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参数资料
| 型号： | CAT22C10J-20 |
| 元件分类： | SRAM |
| 英文描述： | 64 X 4 NON-VOLATILE SRAM, 200 ns, PDSO16 |
| 封装： | SOIC-16 |
| 文件页数： | 4/10页 |
| 文件大小： | 68K |
| 代理商： | CAT22C10J-20 |
CAT22C10
3
Doc. No. 1082, Rev. O
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) .............. -2.0 to +VCC +2.0V
VCC with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(3) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Reference Test Method
NEND(1)
Endurance
100,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(1)
Data Retention
10
Years
MIL-STD-883, Test Method 1008
VZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
Conditions
ICC
Current Consumption
40
mA
All Inputs = 5.5V
(Operating)
TA = 0
°C
All I/O’s Open
ISB
Current Consumption
30
A
CS = VCC
(Standby)
All I/O’s Open
ILI
Input Current
10
A0 ≤ VIN ≤ 5.5V
ILO
Output Leakage Current
10
A0 ≤ VOUT ≤ 5.5V
VIH
High Level Input Voltage
2
VCC
V
VIL
Low Level Input Voltage
0
0.8
V
VOH
High Level Output Voltage
2.4
V
IOH = –2mA
VOL
Low Level Output Voltage
0.4
V
IOL = 4.2mA
VDH
RAM Data Holding Voltage
1.5
5.5
V
VCC
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Parameter
Max.
Unit
Conditions
CI/O(1)
Input/Output Capacitance
10
pF
VI/O = 0V
CIN(1)
Input Capacitance
6
pF
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1V to VCC +1V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT22C10J-20TE13 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10J-20-TE13 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (EEPROM Based) |
| CAT22C10J-30 | 制造商:Catalyst Semiconductor 功能描述:Non-Volatile RAM, 64 x 4, 16 Pin, Plastic, SOP |
| CAT22C10J-30TE13 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10J-30-TE13 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (EEPROM Based) |
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