参数资料
| 型号： | CAT24C03LI-G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SERIAL 2KB I2C 8PDIP |
| 标准包装： | 50 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
CAT24C03, CAT24C05
Table 4. PIN IMPEDANCE CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C, unless otherwise specified.)
Symbol
C IN (Note 4)
I WP (Note 5)
Parameter
SDA I/O Pin Capacitance
Input Capacitance (Other Pins)
WP Input Current
Conditions
V IN = 0 V
V IN = 0 V
V IN < V IH , V CC = 5.5 V
Max
8
6
200
Units
pF
pF
m A
V IN < V IH , V CC = 3.3 V
V IN < V IH , V CC = 1.8 V
V IN > V IH
150
100
1
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull ? down is relatively strong;
therefore the external driver must be able to supply the pull ? down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V CC ), the strong pull ? down reverts to a weak current source.
Table 5. A.C. CHARACTERISTICS
(Note 6) (V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C, unless otherwise specified.)
Standard
Fast
Symbol
Parameter
Min
Max
Min
Max
Units
F SCL
t HD:STA
t LOW
t HIGH
t SU:STA
t HD:DAT
t SU:DAT
t R
t F (Note 7)
t SU:STO
t BUF
t AA
t DH
T i (Note 7)
t SU:WP
t HD:WP
t WR
t PU (Notes 7, 8)
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
Power ? up to Ready Mode
4
4.7
4
4.7
0
250
4
4.7
100
0
2.5
100
1000
300
3.5
100
5
1
0.6
1.3
0.6
0.6
0
100
0.6
1.3
100
0
2.5
400
300
300
0.9
100
5
1
kHz
m s
m s
m s
m s
m s
ns
ns
ns
m s
m s
m s
ns
ns
m s
m s
ms
ms
6. Test conditions according to “A.C. Test Conditions” table.
7. Tested initially and after a design or process change that affects this parameter.
8. t PU is the delay between the time V CC is stable and the device is ready to accept commands.
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
0.2 x V CC to 0.8 x V CC
v 50 ns
0.3 x V CC , 0.7 x V CC
0.5 x V CC
Current Source: I OL = 3 mA (V CC w 2.5 V); I OL = 1 mA (V CC < 2.5 V); C L = 100 pF
http://onsemi.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C03LI-G3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
| CAT24C03LI-GT | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
| CAT24C03LI-GT3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM |
| CAT24C03LI-T | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
| CAT24C03LIT3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
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