- 您现在的位置：买卖IC网 > PDF目录3941 > CAT24C04WI-GT3JN (ON Semiconductor)IC EEPROM I2C SER 4KB IND 8SOIC PDF资料下载
参数资料
| 型号： | CAT24C04WI-GT3JN |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SER 4KB IND 8SOIC |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (512 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16
V CC
Table 1. PIN FUNCTION
Pin Name ?
Function
SCL
A0, A1, A2
SDA
Device Address Input
Serial Data Input/Output
A 2 , A 1 , A 0
CAT24Cxx
SDA
SCL
Serial Clock Input
WP
Write Protect Input
WP
V CC
V SS
NC
Power Supply
Ground
No Connect
V SS
Figure 1. Functional Symbol
Table 2. ABSOLUTE MAXIMUM RATINGS
?The exposed pad for the TDFN/UDFN packages can be left floating
or connected to Ground.
Parameters
Storage Temperature
Voltage on any pin with respect to Ground (Note 1)
Ratings
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. During input transitions, voltage undershoot on any pin should not exceed ? 1 V for more than 20 ns. Voltage overshoot on pins A 0 , A 1 , A 2
and WP should not exceed V CC + 1 V for more than 20 ns, while voltage on the I 2 C bus pins, SCL and SDA, should not exceed the absolute
maximum ratings, irrespective of V CC .
Table 3. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
Table 4. D.C. OPERATING CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +125 ° C and V CC = 1.7 V to 5.5 V, T A = ? 40 ° C to +85 ° C, unless otherwise specified.)
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
Min
Max
1
2
Units
mA
mA
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +85 ° C
V CC ≤ 3.3 V
1
m A
T A = ? 40 ° C to +85 ° C
V CC > 3.3 V
T A = ? 40 ° C to +125 ° C
3
5
I L
V IL
I/O Pin Leakage
Input Low Voltage
Pin at GND or V CC
? 0.5
2
0.3 x V CC
m A
V
V IH
Input High Voltage
A 0 , A 1 , A 2 and WP
0.7 x V CC
V CC + 0.5
V
SCL and SDA
0.7 x V CC
5.5
V OL
Output Low
Voltage
V CC > 2.5 V, I OL = 3 mA
V CC < 2.5 V, I OL = 1 mA
0.4
0.2
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| MPC8379VRAJF | MPU POWERQUICC II PRO 689-PBGA |
| 395-012-521-801 | CARD EDGE 12POS DL .100X.200 BLK |
| MPC8379VRAGD | MPU POWERQUICC II PRO 689-PBGA |
| MPC8379ECVRANG | MPU POWERQUICC II PRO 689-PBGA |
| 395-012-521-204 | CARD EDGE 12POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C04WIT3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb CMOS Serial EEPROM |
| CAT24C04WI-T3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM |
| CAT24C04YE.GT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM |
| CAT24C04YE-GT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM |
| CAT24C04YE-T3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM |
发布紧急采购，3分钟左右您将得到回复。