参数资料
型号: CAT24C05YI-GT3
厂商: ON Semiconductor
文件页数: 2/14页
文件大小: 0K
描述: IC EEPROM 4KBIT 400KHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K (512 x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
产品目录页面: 807 (CN2011-ZH PDF)
其它名称: CAT24C05YI-GT3DKR
CAT24C03, CAT24C05
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on any pin with respect to Ground (Note 1)
Ratings
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
Table 3. D.C. OPERATING CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I CCR
I CCW
I SB
I L
V IL
V IH
V OL1
V OL2
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
All I/O Pins at GND or V CC
Pin at GND or V CC
V CC ≥ 2.5 V, I OL = 3 mA
V CC < 2.5 V, I OL = 1 mA
? 0.5
V CC x 0.7
1
1
1
1
V CC x 0.3
V CC + 0.5
0.4
0.2
mA
mA
m A
m A
V
V
V
V
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