参数资料
| 型号： | CAT24C256WI-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 400KHZ 8SOIC |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | CAT24C256WI-GT3OSDKR |
CAT24C256
Table 7. A.C. CHARACTERISTICS ? Mature Product (Rev D) (Notes 10, 11)
(V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, and V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C, unless otherwise specified.)
Fast ? Plus
Standard
Fast
V CC = 2.5 V ? 5.5 V
T A = ? 40 5 C to +85 5 C
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
F SCL
t HD:STA
t LOW
t HIGH
t SU:STA
t HD:DAT
t SU:DAT
t R (Note 12)
t F (Note 12)
t SU:STO
t BUF
t AA
t DH
T i (Note 12)
t SU:WP
t HD:WP
t WR
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
4
4.7
4
4.7
0
250
4
4.7
100
0
2.5
100
1,000
300
3.5
100
5
0.6
1.3
0.6
0.6
0
100
0.6
1.3
100
0
2.5
400
300
300
0.9
100
5
0.25
0.55
0.25
0.25
0
50
0.25
0.5
50
0
1
1,000
100
100
0.50
100
5
kHz
m s
m s
m s
m s
m s
ns
ns
ns
m s
m s
m s
ns
ns
m s
m s
ms
t PU
(Notes 12, 13)
Power-up to Ready Mode
1
1
0.1
1
ms
10. The product Rev D is identified by letter “D” or a dedicated marking code on top of the package.
11. Test conditions according to “A.C. Test Conditions” table.
12. Tested initially and after a design or process change that affects this parameter.
13. t PU is the delay between the time V CC is stable and the device is ready to accept commands.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 8. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
0.2 x V CC to 0.8 x V CC
≤ 50 ns
0.3 x V CC , 0.7 x V CC
0.5 x V CC
Current Source: I L = 3 mA (V CC ≥ 2.5 V); I L = 1 mA (V CC < 2.5 V); C L = 100 pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C256WI-GT3 | 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT SERIAL 400KHZ SOIC-8 |
| CAT24C256XE | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| CAT24C256XE-T2 | 制造商:ON Semiconductor 功能描述: |
| CAT24C256XI | 功能描述:电可擦除可编程只读存储器 (32768x8) 256K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C256XI | 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT SERIAL 400KHZ SOIC-8 制造商:ON Semiconductor 功能描述:IC, EEPROM, 256KBIT SERIAL 400KHZ SOIC-8 |
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