参数资料
| 型号： | CAT24C512YI-G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SER 512KB 8TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 100kHz，400kHz，1MHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
CAT24C512
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
–65 to +150
–0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Notes 3, 4)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program/Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS
V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise speci ? ed.
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz/1 MHz
V CC = 1.8 V
Min
Max
1
1.8
Units
mA
mA
V CC = 5.5 V
2.5
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +85 ° C
2
m A
T A = ? 40 ° C to +125 ° C
5
I L
I/O Pin Leakage
Pin at GND or V CC
T A = ? 40 ° C to +85 ° C
1
m A
T A = ? 40 ° C to +125 ° C
2
V IL1
V IL2
V IH1
V IH2
V OL1
V OL2
Input Low Voltage
Input Low Voltage
Input High Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
2.5 V ≤ V CC ≤ 5.5 V
1.8 V ≤ V CC < 2.5 V
2.5 V ≤ V CC ≤ 5.5 V
1.8 V ≤ V CC < 2.5 V
V CC ≥ 2.5 V, I OL = 3.0 mA
V CC < 2.5 V, I OL = 1.0 mA
? 0.5
? 0.5
0.7 V CC
0.75 V CC
0.3 V CC
0.25 V CC
V CC + 0.5
V CC + 0.5
0.4
0.2
V
V
V
V
V
V
Table 4. PIN IMPEDANCE CHARACTERISTICS
V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwis e speci ? ed.
Symbol
C IN (Note 5)
C IN (Note 5)
I WP , I A (Note 6)
Parameter
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current, Address Input
Current (A 0 , A 1 , A 2 )
Conditions
V IN = 0 V
V IN = 0 V
V IN < V IH , V CC = 5.5 V
V IN < V IH , V CC = 3.3 V
Max
8
6
75
50
Units
pF
pF
m A
V IN < V IH , V CC = 1.8 V
V IN > V IH
25
2
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
6. When not driven, the WP, A 0 , A 1 , A 2 pins are pulled down to GND internally. For improved noise immunity, the internal pull ? down is relatively
strong; therefore the external driver must be able to supply the pull ? down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V CC ), the strong pull ? down reverts to a weak current source.
http://onsemi.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| CAT24M01HU5I-GT3 | IC EEPROM 1MB I2C SER 8-UDFN |
| AYF530535 | CONN SOCKET FPC 0.5MM 5POS SMD |
| FH52-12S-0.5SH | CONN FFC/FPC 0.5MM SMD 12POS |
| 395-020-521-201 | CARD EDGE 20POS DL .100X.200 BLK |
| 395-020-520-804 | CARD EDGE 20POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C512YI-GT3 | 功能描述:电可擦除可编程只读存储器 512KB I2C SER 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C512YIGT3JN | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C512ZI-T3 | 功能描述:电可擦除可编程只读存储器 512KB I2C SER 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C64C4CTR | 功能描述:IC EEPROM 64KBIT 400KHZ 4WLCSP 制造商:on semiconductor 系列:- 包装:带卷（TR） 零件状态:有效 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:64K（8K x 8） 速度:400kHz 接口:I2C，2 线串口 电压 - 电源:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:4-XFBGA，WLCSP 供应商器件封装:4-WLCSP（0.76x0.76） 标准包装:5,000 |
| CAT24C64HU4I-GT3 | 功能描述:电可擦除可编程只读存储器 64KB I2C SER 电可擦除可编程只读存储器 MUX RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。