参数资料
型号: CAT25128VI-G
厂商: ON Semiconductor
文件页数: 9/20页
文件大小: 0K
描述: IC EEPROM 128KBIT 10MHZ 8SOIC
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 807 (CN2011-ZH PDF)
CAT25128
Byte Write
Once the WEL bit is set, the user may execute a write
sequence, by sending a WRITE instruction, a 16 ? bit address
and data as shown in Figure 5. Only 14 significant address
bits are used by the CAT25128. The rest are don’t care bits,
as shown in Table 14. Internal programming will start after
the low to high CS transition. During an internal write cycle,
all commands, except for RDSR (Read Status Register) will
be ignored. The RDY bit will indicate if the internal write
cycle is in progress (RDY high), or the device is ready to
accept commands (RDY low).
Page Write
After sending the first data byte to the CAT25128, the host
may continue sending data, up to a total of 64 bytes,
according to timing shown in Figure 6. After each data byte,
the lower order address bits are automatically incremented,
while the higher order address bits (page address) remain
unchanged. If during this process the end of page is
exceeded, then loading will “roll over” to the first byte in the
page, thus possibly overwriting previously loaded data.
Table 14. BYTE ADDRESS
Following completion of the write cycle, the CAT25128 is
automatically returned to the write disable state.
Write Identification Page
The additional 64 ? byte Identification Page (IP) can be
written with user data using the same Write commands
sequence as used for Page Write to the main memory array
(Figure 6). The IPL bit from the Status Register must be set
(IPL = 1) using the WRSR instruction, before attempting
to write to the IP.
The address bits [A15:A6] are Don’t Care and the
[A5:A0] bits define the byte address within the
Identification Page. In addition, the Byte Address must point
to a location outside the protected area defined by the BP1,
BP0 bits from the Status Register. When the full memory
array is write protected (BP1, BP0 = 1,1), the write
instruction to the IP is not accepted and not executed.
Also, the write to the IP is not accepted if the LIP bit from
the Status Register is set to 1 (the page is locked in
Read ? only mode).
Address Significant Bits
Address Don’t Care Bits
# Address Clock Pulses
Main Memory Array
Identification Page*
A13 ? A0
A5 ? A0
A15 ? A14
A15 ? A6
16
16
*New Product only.
CS
0
1
2
3
4
5
6
7
8
21
22 23
24
25
26 27
28
29
30 31
SCK
OPCODE
BYTE ADDRESS*
DATA IN
SI
0
0
0
0
0
0
1
0
A N
A 0 D7 D6 D5 D4 D3 D2 D1 D0
SO
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 14)
Figure 5. Byte WRITE Timing
CS
0
1
2
3
4
5
6
7
8
21
22
23 24 ? 31 3 2 ? 39 24+(N ? 1)x8 ? 1 .. 24+(N ? 1)x8
SCK
24+Nx8 ? 1
OPCODE
BYTE ADDRESS*
DATA IN
Data Byte N
SI
0
0
0
0
0
0
1
0
A N
A 0
Data Data Data
Byte 1 Byte 2 Byte 3
7..1
0
SO
Dashed Line = mode (1, 1)
HIGH IMPEDANCE
* Please check the Byte Address Table (Table 14)
Figure 6. Page WRITE Timing
http://onsemi.com
9
相关PDF资料
PDF描述
AMM30DRSN CONN EDGECARD 60POS DIP .156 SLD
AMM30DRSH CONN EDGECARD 60POS DIP .156 SLD
CAT24C32LI-G IC EEPROM 32KBIT 400KHZ 8DIP
AMM30DRSD CONN EDGECARD 60POS DIP .156 SLD
ASC49DRTN-S93 CONN EDGECARD 98POS DIP .100 SLD
相关代理商/技术参数
参数描述
CAT25128VI-G 制造商:ON Semiconductor 功能描述:IC EEPROM 128KBIT SERIAL 10MHZ SOIC-8 制造商:ON Semiconductor 功能描述:IC, EEPROM, 128KBIT, SERIAL 10MHZ SOIC-8
CAT25128VI-GT3 功能描述:电可擦除可编程只读存储器 128K SPI Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25128VP2I-GT3 功能描述:电可擦除可编程只读存储器 128K SPI Serial RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25128XE 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
CAT25128XI 功能描述:电可擦除可编程只读存储器 128K SPI Serial RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8