参数资料
型号: CAT25160YI-GT3JN
厂商: ON Semiconductor
文件页数: 4/19页
文件大小: 0K
描述: IC EEPROM SRL 16KB I2C 8TSSOP
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
CAT25080, CAT25160
Table 7. A.C. CHARACTERISTICS – New Product (Rev D)
(T A = ? 40 ° C to +85 ° C (Industrial) and T A = ? 40 ° C to +125 ° C (Extended), unless otherwise specified.) (Note 9)
V CC = 1.8 V ? 5.5 V
? 40 5 C to +85 5 C
V CC = 2.5 V ? 5.5 V
? 40 5 C to +125 5 C
V CC = 4.5 V ? 5.5 V
? 40 5 C to +85 5 C
Symbol
f SCK
Parameter
Clock Frequency
Min
DC
Max
5
Min
DC
Max
10
Min
DC
Max
20
Units
MHz
t SU
t H
t WH
t WL
t LZ
t RI (Note 10)
t FI (Note 10)
t HD
t CD
t V
t HO
t DIS
t HZ
t CS
t CSS
t CSH
t CNS
t CNH
t WPS
t WPH
t WC (Note 12)
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
CS Setup Time
CS Hold Time
CS Inactive Setup Time
CS Inactive Hold Time
WP Setup Time
WP Hold Time
Write Cycle Time
20
20
75
75
0
10
0
80
30
30
20
20
10
10
50
2
2
70
50
100
5
10
10
40
40
0
10
0
40
30
30
20
20
10
10
25
2
2
35
20
25
5
5
5
20
20
0
5
0
20
15
20
15
15
10
10
25
2
2
20
20
25
5
ns
ns
ns
ns
ns
m s
m s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Table 8. POWER ? UP TIMING (Notes 10, 11)
Symbol
t PUR
t PUW
Power ? up to Read Operation
Power ? up to Write Operation
Parameter
Min
0.1
0.1
Max
1
1
Units
ms
ms
9. AC Test Conditions:
Input Pulse Voltages: 0.3 V CC to 0.7 V CC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 V CC
Output load: current source I OL max /I OH max ; C L = 30 pF
10. This parameter is tested initially and after a design or process change that affects the parameter.
11. t PUR and t PUW are the delays required from the time V CC is stable at the operating voltage until the specified operation can be initiated.
12. t WC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
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