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参数资料
| 型号： | CAT28F020GI90 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 2MBIT 90NS 32PLCC |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 32 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC（11.43x13.97） |
| 包装： | 管件 |
| 其它名称： | CAT28F020GI-90 CAT28F020GI-90-ND |
2 Megabit CMOS Flash Memory second source
CAT28F020
Licensed Intel
FEATURES
s Commercial, industrial and automotive
s Fast read access time: 90/120 ns
s Low power CMOS dissipation:
– Active: 30 mA max (CMOS/TTL levels)
– Standby: 1 mA max (TTL levels)
– Standby: 100 μ A max (CMOS levels)
s High speed programming:
– 10 μ s per byte
– 4 seconds typical chip program
s 0.5 seconds typical chip-erase
temperature ranges
s Stop timer for program/erase
s On-chip address and data latches
s JEDEC standard pinouts:
– 32-pin DIP
– 32-pin PLCC
– 32-pin TSOP (8 x 20)
s 100,000 program/erase cycles
s 12.0V
± 5% programming and erase voltage
s 10 year data retention
s Electronic signature
DESCRIPTION
The CAT28F020 is a high speed 256K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and E 2 PROM devices. Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
BLOCK DIAGRAM
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F020 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
Y-GATING
Y-DECODER
A0–A17
VOLTAGE VERIFY
SWITCH
X-DECODER
2,097,152 BIT
MEMORY
ARRAY
5115 FHD F02
? 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1029, Rev. F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F020GI-90 | 制造商:ON Semiconductor 功能描述:FLASH 2MB 256KX8 90NS PLCC32 |
| CAT28F020GI-90T | 功能描述:闪存 2 Megabit CMOS 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F020H12 | 功能描述:闪存 (256x8) 2M 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F020H-12 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28F020H-12T | 功能描述:闪存 2 Megabit CMOS 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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