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参数资料
| 型号： | CAT28F512HI12 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MEM 512KB 120NS 32TSOP |
| 产品变化通告： | Catalyst Group Product Obsolescence 26/Apr/2010 |
| 标准包装： | 156 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 512K (64K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 32-TSOP |
| 包装： | 托盘 |
CAT28F512
512K-Bit CMOS Flash Memory
FEATURES
Licensed Intel
second source
s Fast Read Access Time: 90/120/150 ns
s Low Power CMOS Dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100 μ A max (CMOS levels)
s High Speed Programming:
–10 μ s per byte
–1 Sec Typ Chip Program
s 12.0V ± 5% Programming and Erase Voltage
s Electronic Signature
s Commercial, Industrial and Automotive
Temperature Ranges
s Stop Timer for Program/Erase
s On-Chip Address and Data Latches
s JEDEC Standard Pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
s 100,000 Program/Erase Cycles
s 10 Year Data Retention
s "Green" Package Options Available
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
BLOCK DIAGRAM
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
I/O0–I/O7
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
Y-GATING
Y-DECODER
A0–A15
VOLTAGE VERIFY
SWITCH
X-DECODER
524,288 BIT
MEMORY
ARRAY
? 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1084, Rev. K
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F512HI-12 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28F512HI-12T | 功能描述:闪存 512K-Bit CMOS 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512HI-90 | 功能描述:闪存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512HI-90T | 功能描述:闪存 512K-Bit CMOS 闪存 Memory RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512HR-12 | 功能描述:闪存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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