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参数资料
| 型号： | CAT28LV64H13-25T |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/15页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 250NS 28TSOP |
| 产品变化通告： | Catalyst Group Product Obsolescence 26/Apr/2010 |
| 标准包装： | 500 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 250ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP（8x13.4） |
| 包装： | 带卷 (TR) |
| 其它名称： | 28LV64H13-25T |
CAT28LV64
Page Write
The page write mode of the CAT28LV64 (essentially an
extended BYTE WRITE mode) allows from 1 to 32 bytes of
data to be programmed within a single EEPROM write
cycle. This effectively reduces the byte ? write time by a
factor of 32.
Following an initial WRITE operation (WE pulsed low,
for t WP , and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address and
data bytes into a 32 byte temporary buffer. The page address
where data is to be written, specified by bits A 5 to A 12 , is
latched on the last falling edge of WE. Each byte within the
page is defined by address bits A 0 to A 4 (which can be loaded
in any order) during the first and subsequent write cycles.
Each successive byte load cycle must begin within t BLC MAX
of the rising edge of the preceding WE pulse. There is no
page write window limitation as long as WE is pulsed low
within t BLC MAX .
Upon completion of the page write sequence, WE must
stay high a minimum of t BLC MAX for the internal automatic
program cycle to commence. This programming cycle
consists of an erase cycle, which erases any data that existed
in each addressed cell, and a write cycle, which writes new
data back into the cell. A page write will only write data to
the locations that were addressed and will not rewrite the
entire page.
t WC
ADDRESS
t AS
t AH
t BLC
t CW
CE
t OEH
OE
WE
DATA OUT
DATA IN
t CS
t OES
t CH
HIGH ? Z
DATA VALID
t DS
t DH
Figure 6. Byte Write Cycle [CE Controlled]
OE
CE
t WP
t BLC
WE
ADDRESS
t WC
I/O
LAST BYTE
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
Figure 7. Page Mode Write Cycle
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28LV64H13I-15 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT28LV64H13I20 | 功能描述:电可擦除可编程只读存储器 (8kx8) 64K 3V 200ns RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV64H13I20T | 功能描述:电可擦除可编程只读存储器 64K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV64H13I-25 | 功能描述:电可擦除可编程只读存储器 (8kx8) 64k 3V 250ns RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28LV64H13I-25T | 功能描述:电可擦除可编程只读存储器 64K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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