参数资料
| 型号： | CAT5112VI-10-T3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC POT DIGITL 10K 32TAP 8SOIC |
| 标准包装： | 1 |
| 系列： | DPP |
| 接片： | 32 |
| 电阻（欧姆）： | 10k |
| 电路数： | 1 |
| 温度系数： | 标准值 300 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 3 线串行（芯片选择，递增，增/减） |
| 电源电压： | 2.5 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 805 (CN2011-ZH PDF) |
| 其它名称： | CAT5112VI-10-T3DKR CAT5112VI-10-TE13DKR CAT5112VI-10-TE13DKR-ND |
CAT5112
http://onsemi.com
3
Table 1. OPERATION MODES
INC
CS
U/D
Operation
High to Low
Low
High
Wiper toward RH
High to Low
Low
Wiper toward RL
High
Low to High
X
Store Wiper Position
Low
Low to High
X
No Store, Return to Standby
X
High
X
Standby
Figure 3. Potentiometer Equivalent Circuit
CW
RL
CL
CH
RWB
RWI
RH
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Supply Voltage
VCC to GND
0.5 to +7
V
Inputs
CS to GND
0.5 to VCC +0.5
V
INC to GND
0.5 to VCC +0.5
V
U/D to GND
0.5 to VCC +0.5
V
RH to GND
0.5 to VCC +0.5
V
RL to GND
0.5 to VCC +0.5
V
RWB to GND
0.5 to VCC +0.5
V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
0 to 70
C
Industrial (‘I’ suffix)
40 to +85
C
Junction Temperature
+150
C
Storage Temperature
65 to +150
C
Lead Soldering (10 s max)
+300
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
ESD Susceptibility
MILSTD883, Test Method 3015
2000
V
Latch-Up
JEDEC Standard 17
100
mA
TDR
Data Retention
MILSTD883, Test Method 1008
100
Years
NEND
Endurance
MILSTD883, Test Method 1003
1,000,000
Stores
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT5112VI-10TE13 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:32-Tap Digitally Programmable Potentiometer |
| CAT5112VI50 | 功能描述:数字电位计 IC DPP NV 32 taps Up/Down w/Buf RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| CAT5112VI-50 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:32a??tap Digital Potentiometer (POT) ith Buffered Wiper |
| CAT5112VI-50-G | 功能描述:数字电位计 IC DPP NV 32 taps Up/Down w/Buf RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| CAT5112VI50GT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:32a??tap Digital Potentiometer (POT) |
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