参数资料
型号: CAT5116VI-GT3
厂商: ON Semiconductor
文件页数: 5/11页
文件大小: 0K
描述: IC POT DIG LOG 32K 100TAP 8SOIC
标准包装: 3,000
系列: DPP
接片: 100
电阻(欧姆): 32k
电路数: 1
温度系数: 标准值 300 ppm/°C
存储器类型: 非易失
接口: 3 线串行(芯片选择,递增,增/减)
电源电压: 2.5 V ~ 6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
CAT5116
http://onsemi.com
3
Table 1. OPERATION MODES
INC
CS
U/D
Operation
High to Low
Low
High
Wiper toward H
High to Low
Low
Wiper toward L
High
Low to High
X
Store Wiper Position
Low
Low to High
X
No Store, Return to Standby
X
High
X
Standby
Figure 4. Potentiometer Equivalent Circuit
RH
CH
RL
RWI
RW
CW
CL
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Supply Voltage
VCC to GND
0.5 to +7
V
Inputs
CS to GND
0.5 to VCC +0.5
V
INC to GND
0.5 to VCC +0.5
V
U/D to GND
0.5 to VCC +0.5
V
RH to GND
0.5 to VCC +0.5
V
RL to GND
0.5 to VCC +0.5
V
RW to GND
0.5 to VCC +0.5
V
Operating Ambient Temperature
Industrial (‘I’ suffix)
40 to +85
C
Junction Temperature (10 s)
+150
C
Storage Temperature
+150
C
Lead Soldering (10 s max)
+300
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
VZAP (Note 1)
ESD Susceptibility
MILSTD883, Test Method 3015
2000
V
ILTH (Notes 1, 2)
Latch-up
JEDEC Standard 17
100
mA
TDR
Data Retention
MILSTD883, Test Method 1008
100
Years
NEND
Endurance
MILSTD883, Test Method 1003
1,000,000
Stores
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V.
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