参数资料
型号: CAT5133ZI-10-GT3
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: IC POT DIG 10K 128TAP 16V 10MSOP
标准包装: 3,000
系列: DPP
接片: 128
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 300 ppm/°C
存储器类型: 非易失
接口: 3 线串行(芯片选择,递增,增/减)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-MSOP
包装: 带卷 (TR)
其它名称: 5133ZI-10-GT3
CAT5133
http://onsemi.com
5
Table 6. DC ELECTRICAL CHARACTERISTICS (VCC = +2.7 V to +6.0 V, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply Current
VCC = 5.5 V, fINC = 1 MHz, Input = GND
1
mA
ICC2
Power supply Current
Nonvolatile WRITE
VCC = 5.5 V, fINC = 1 MHz, Input = GND
3.0
mA
ISB(VCC)
Standby Current (VCC = 5 V)
VIN = GND or VCC, INC = VCC
5
mA
ISB(V+)
V+ Standby Current
VCC = 5 V, V+ = 16 V
10
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7 VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3.0 V)
IOL = 3 mA
0.4
V
Table 7. CAPACITANCE (TA = 25C, f = 1.0 MHz, VCC = 5.0 V)
Symbol
Parameter
Test Conditions
Min
Max
Units
CI/O
Input/Output Capacitance (SDA)
VI/O = 0 V (Note 13)
8
pF
CIN
Input Capacitance (A0, A1, SCL)
VIN = 0 V (Note 13)
6
pF
Table 8. POWER UP TIMING (Notes 13, 14)
Symbol
Parameter
Min
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
Table 9. WIPER TIMING
Symbol
Parameter
Min
Max
Units
tWRPO
Wiper Response Time After Power Supply Stable
5
10
ms
tWRL
Wiper Response Time After Instruction Issued
5
10
ms
Table 10. WRITE CYCLE LIMITS
Symbol
Parameter
Min
Max
Units
tWR
Write Cycle Time
5
ms
Table 11. RELIABILITY CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Reference Test Method
Min
Max
Units
NEND (Note 13)
Endurance
MILSTD883, Test Method 1033
100,000
Cycles/Byte
TDR (Note 13)
Data Retention
MILSTD883, Test Method 1008
100
Years
13.This parameter is tested initially and after a design or process change that affects the parameter.
14.tPUR and tPUW are the delays required from the time VCC is stable until the time the specified operation can be initiated.
相关PDF资料
PDF描述
CAT5138SDI-10GT3 IC DPP I2C 128TAP VOL SC70-6
CAT5140ZI-00-GT3 IC POT DGTL 256TAP I2C/EEP 8MSOP
CAT5171TBI-50GT3 IC POT DGTL 50K 256TAP SOT23-8
CAT5172TBI-50GT3 IC POT DGTL 50K 256TAP SOT23-8
CAT5251WI-50-T1 IC POT DPP 50K 256TAP 24SOIC
相关代理商/技术参数
参数描述
CAT5136SDI-50GT3 功能描述:IC DPP I2C 128TAP VOL SC70-6 RoHS:是 类别:集成电路 (IC) >> 数据采集 - 数字电位器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 接片:256 电阻(欧姆):100k 电路数:2 温度系数:标准值 35 ppm/°C 存储器类型:易失 接口:6 线串行(芯片选择,递增,增/减) 电源电压:2.6 V ~ 5.5 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 供应商设备封装:14-TSSOP 包装:带卷 (TR)
CAT5137SDI-00GT3 功能描述:IC DPP I2C 128TAP VOL SC70-6 RoHS:是 类别:集成电路 (IC) >> 数据采集 - 数字电位器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 接片:256 电阻(欧姆):100k 电路数:2 温度系数:标准值 35 ppm/°C 存储器类型:易失 接口:6 线串行(芯片选择,递增,增/减) 电源电压:2.6 V ~ 5.5 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 供应商设备封装:14-TSSOP 包装:带卷 (TR)
CAT5137SDI-10GT3 制造商:ON Semiconductor 功能描述:DPP IIC 128 TAPS VOLATILE - Tape and Reel
CAT5138SDI-10GT3 功能描述:IC DPP I2C 128TAP VOL SC70-6 RoHS:是 类别:集成电路 (IC) >> 数据采集 - 数字电位器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 接片:256 电阻(欧姆):100k 电路数:2 温度系数:标准值 35 ppm/°C 存储器类型:易失 接口:6 线串行(芯片选择,递增,增/减) 电源电压:2.6 V ~ 5.5 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 供应商设备封装:14-TSSOP 包装:带卷 (TR)
CAT5140ZI-00-GT3 功能描述:数字电位计 IC DPP NONVOL SGL 256TAP I2C RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel