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参数资料
| 型号： | CAT808NTBI-22-GT1 |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 |
| 封装： | ROHS COMPLIANT, MO-193, TSOT-23, 5 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 194K |
| 代理商： | CAT808NTBI-22-GT1 |
CAT808
Doc. No. 3024 Rev. A
2
2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS
(1)
Parameters
Ratings
Units
Temperature under Bias
-55 to +125
C
Storage Temperature
-65 to +150
C
Voltage on any Pin with Respect to GND
(2)(3)
-2.0 to VDD + 2.0
V
VDD with Respect to GND
-2.0 to 7.0
V
Lead Soldering temperature (10 seconds)
+300
C
TSOT-23-5
250
mW
Power Dissipation
SOT-89
500
mW
RECOMMENDED OPERATING CONDITIONS
Parameters
Ratings
Units
VDD
+1.2 to +6.0
V
Operating Temperature Range
-40 to +85
C
DC ELECTRICAL CHARACTERISTICS
TA = -40C to +85C, VDD = 1.2V to 6.0V
Symbol
Parameter
Conditions
Min Typ. Max
Units
VDET
Detection Voltage, 27
TA = -40C to +85C
2.62
2.7 2.78
VDET
Detection Voltage, 32
TA = -40C to +85C
3.12
3.2 3.28
V
VDD = 4.0V
-
2.4
5
VDD = 5.0V
-
3.5
7
IDD
Current Consumption
VDD = 6.0V
-
5
10
A
VDD=1.2V
0.6
1.4
-
IOUT
Output SinkCurrent
VDS = 0.5V
VDD=2.4V
2.9
5
-
mA
ILEAK
Output Leakage Current
VDS = 5.0V, VDD = 5.0V
-
1
A
TPHL/LH
Response Time
–
-
60
s
Δ - VDET
ΔTA ● -VDET
Detection Voltage
Temperature Coefficient
(4)
TA = -40C to +85C
-
±10 ±100 ppm/C
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and
reliability.
(2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns.
(3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V.
(4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
]
C
/
ppm
[
000
,
000
,
1
V
-
T
V
DET
A
DET
×
Δ
Δ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT808NTBI-22-GT3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-22T1 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-22T3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-23-GT1 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
| CAT808NTBI-23-GT3 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:Low-Power Precision Voltage Detector |
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