参数资料
| 型号： | CAT93C56YI-G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 8TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K（256 x 8 或 128 x 16） |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
| 其它名称： | 93C56YI-G |
CAT93C56, CAT93C57
Table 9. A.C. TEST CONDITIONS
Input Rise and Fall Times
≤ 50 ns
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
0.4 V to 2.4 V
0.8 V, 2.0 V
0.2 V CC to 0.7 V CC
0.5 V CC
4.5 V v V CC v 5.5 V
4.5 V v V CC v 5.5 V
1.8 V v V CC v 4.5 V
1.8 V v V CC v 4.5 V
Output Load
Device Operation
The CAT93C56/57 is a 2048 ? bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93C56/57 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 10 ? bit
instructions for 93C57 or seven 11 ? bit instructions for
93C56 control the reading, writing and erase operations of
the device. When organized as X8, seven 11 ? bit instructions
for 93C57 or seven 12 ? bit instructions for 93C56 control the
reading, writing and erase operations of the device. The
CAT93C56/57 operates on a single power supply and will
generate on chip, the high voltage required during any write
operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
Current Source I OLmax /I OHmax ; CL=100 pF
from the device, or when checking the ready/busy status
after a write operation. The serial communication protocol
follows the timing shown in Figure 2.
The ready/busy status can be determined after the start of
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
SK
t DIS
t SKHI
t SKLOW
t DIH
t CSH
DI
CS
t CSS
V ALID
VALID
DO
t DIS
t PD0 , t PD1
DATA VALID
t CSMN
Figure 2. Synchronous Data Timing
http://onsemi.com
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT93C56YI-GT2 | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2-Kb Microwire Serial CMOS EEPROM |
| CAT93C56YI-GT2E | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C56YI-GT3 | 功能描述:电可擦除可编程只读存储器 2K-Bit Microwire Serial 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C56YI-GT3E | 制造商:CATALYST 制造商全称:Catalyst Semiconductor 功能描述:2K-Bit Microwire Serial EEPROM |
| CAT93C56YIT2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2-Kb Microwire Serial CMOS EEPROM |
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