参数资料
| 型号： | CAT93C66VI-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8SOIC |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K（512 x 8 或 256 x 16） |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 807 (CN2011-ZH PDF) |
| 其它名称： | CAT93C66VI-GT3DKR CAT93C66VI-GT3DKR-ND CAT93C66VI-GT3OSDKR |
CAT93C66, CAT93W66
Write
After receiving a WRITE command (Figure 5), address
and the data, the CS (Chip Select) pin must be deselected for
a minimum of t CSMIN . The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the SK
pin is not necessary after the device has entered the self
clocking mode. The ready/busy status of the CAT93C66,
CAT93W66 can be determined by selecting the device and
polling the DO pin. Since this device features Auto ? Clear
before write, it is NOT necessary to erase a memory location
before it is written into.
SK
CS
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t CSMIN (Figure 6). The falling edge of CS will start the self
clocking clear cycle of the selected memory location. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C66, CAT93W66 can be determined by selecting the
device and polling the DO pin. Once cleared, the content of
a cleared location returns to a logical “1” state.
STANDBY
DI
1
0
0
*
* ENABLE = 11
DISABLE = 00
Figure 4. EWEN/EWDS Instruction Timing
SK
t CSMIN
CS
A N A N ? 1
A 0
D N
D 0
STATUS
VERIFY
STANDBY
DI
1
0
1
DO
HIGH ? Z
t SV
BUSY
READY
t HZ
HIGH ? Z
t EW
Figure 5. Write Instruction Timing
SK
CS
A N
A N ? 1
A 0
t CS
STATUS
VERIFY
STANDBY
DI
1
1
1
DO
HIGH ? Z
t SV
BUSY
READY
t HZ
HIGH ? Z
t EW
Figure 6. Erase Instruction Timing
http://onsemi.com
7
相关PDF资料 |
PDF描述 |
|---|---|
| A1020B-1PL84C | IC FPGA 2K GATES 84-PLCC COM |
| 973-025-010R011 | BACKSHELL DB25 STR BLK PLASTIC |
| A10V20B-PL84C | IC FPGA 2K GATES 84-PLCC COM |
| 973-015-010R011 | BACKSHELL DB15 STR BLK PLASTIC |
| 979-025-030R121 | BACKSHELL DB25 DIE CAST ZINC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT93C66VI-TE13 | 制造商:Catalyst Semiconductor 功能描述:EEPROM Serial-Microwire 4K-bit 512 x 8/256 x 16 3.3V/5V 8-Pin SOIC N T/R |
| CAT93C66VP2I-GT3 | 功能描述:电可擦除可编程只读存储器 4K-Bit Microwire RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66V-TE13 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C66W | 功能描述:电可擦除可编程只读存储器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66W-1.8 | 功能描述:电可擦除可编程只读存储器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。