参数资料
| 型号： | CAV24C16WE-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | EEPROM I2C SER 16KB I2C 8SOIC |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100kHz，400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | CAV24C16WE-GT3OSDKR |
CAV24C02, CAV24C04, CAV24C08, CAV24C16
DEVICE MARKINGS
(TSSOP ? 8)
CSSS
AYMXXX
G
(SOIC ? 8)
24CSSS
AYMXXX
G
CSSS
SSS
= Specific Device Code, where
= 02H for CAV24C02
SSS
SSS
SSS
A
Y
M
XXX
G
= 04K for CAV24C04
= 08K for CAV24C08
= 16K for CAV24C16
= Assembly Location
= Production Year (Last Digit)
= Production Month (1 ? 9, O, N, D)
= Last Three Digits of Assembly Lot Number
= Pb ? Free Package
24CSSS = Specific Device Code, where
SSS = 02H for CAV24C02
SSS = 04K for CAV24C04
SSS = 08K for CAV24C08
SSS = 16K for CAV24C16
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1 ? 9, O, N, D)
XXX = Last Three Digits of Assembly Lot Number
= Pb ? Free Package
G
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on any pin with respect to Ground (Note 1)
Ratings
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. During input transitions, voltage undershoot on any pin should not exceed ? 1 V for more than 20 ns. Voltage overshoot on pins A 0 , A 1 , A 2
and WP should not exceed V CC + 1 V for more than 20 ns, while voltage on the I 2 C bus pins, SCL and SDA, should not exceed the absolute
maximum ratings, irrespective of V CC .
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
Table 3. D.C. OPERATING CHARACTERISTICS
(V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
Min
Max
1
2
Units
mA
mA
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +125 ° C
5
m A
I L
V IL
I/O Pin Leakage
Input Low Voltage
Pin at GND or V CC
? 0.5
2
0.3 x V CC
m A
V
V IH
V OL
Input High Voltage
Output Low Voltage
A 0 , A 1 , A 2 and WP
SCL and SDA
V CC > 2.5 V, I OL = 3 mA
0.7 x V CC
0.7 x V CC
V CC + 0.5
5.5
0.4
V
V
V
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| A54SX08-1TQG144I | IC FPGA SX 12K GATES 144-TQFP |
| A54SX08-2TQ144 | IC FPGA SX 12K GATES 144-TQFP |
| RBB100DHBS | CONN EDGECARD 200PS R/A .050 DIP |
| ACC50DRXI | CONN EDGECARD 100PS .100 DIP SLD |
| CAT24C256WI-GT3 | IC EEPROM 256KBIT 400KHZ 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAV24C16YE-GT3 | 功能描述:电可擦除可编程只读存储器 16KB I2C SER 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAV24C256WE-GT3 | 制造商:ON Semiconductor 功能描述:256KB I2C SER EEPROM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / 256KB I2C SER EEPROM |
| CAV24C256YE-GT3 | 制造商:ON Semiconductor 功能描述:256KB I2C SER EEPROM - Tape and Reel |
| CAV24C32C4CTR | 功能描述:IC EEPROM 32KB I2C SER 4WLCSP 制造商:on semiconductor 系列:汽车级，AEC-Q100 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:32Kb （4K x 8） 时钟频率:400kHz 写周期时间 - 字，页:5ms 访问时间:900ns 存储器接口:I2C 电压 - 电源:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C（TA） 标准包装:5,000 |
| CAV24C32WE-GT3 | 功能描述:电可擦除可编程只读存储器 32KB I2C SER 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。