参数资料
型号: CBTD3384DK
厂商: NXP Semiconductors N.V.
元件分类: 开关
英文描述: 10-bit level shifting bus switch with 5-bit output enables
中文描述: 带5位输出使能的10位电平转换总线开关
封装: CBTD3384D<SOT137-1 (SO24)|<<http://www.nxp.com/packages/SOT137-1.html<1<week 5, 2005,;CBTD3384D<SOT137-1 (SO24)|<<http://www.nxp.com/packages/SOT137-1.html<1<week 5
文件页数: 12/17页
文件大小: 335K
代理商: CBTD3384DK
CBTD3384
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 19 November 2010
4 of 17
NXP Semiconductors
CBTD3384
10-bit level shifting bus switch with 5-bit output enables
7.
Limiting values
[1]
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under Section 8. is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
[2]
The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
8.
Recommended operating conditions
9.
Static characteristics
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Tamb = 40 °C to +85 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+7.0
V
VI
input voltage
0.5
+7.0
V
IO
output current
VO <0 V
-
±128
mA
IIK
input clamping current
VI/O =0V
50
-
mA
Tstg
storage temperature
65
+150
°C
Table 5.
Operating conditions
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
4.5
-
5.5
V
VIH
HIGH-level input voltage
2.0
-
V
VIL
LOW-level input voltage
-
0.8
V
Tamb
ambient temperature
operating in free air
40
-
+85
°C
Table 6.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Tamb = 40 °C to +85 °C
Unit
Min
Typ[1]
Max
VIK
input clamping voltage
VCC =4.5 V; II = 18 mA
-
1.2
V
II
input leakage current
VCC =5.5 V; VI = GND or 5.5 V
-
±1
μA
ICC
supply current
VCC =5.5 V; IO =0mA;
VI =VCC or GND
--
1.5
mA
ΔI
CC
additional supply current
per input pin; VCC = 5.5 V; one input
at 3.4 V, other inputs at VCC or GND
--
2.5
mA
Vpass
pass voltage
---
V
CI
input capacitance
control pins; VI = 3 V or 0 V
-
3.2
-
pF
Cio(off)
off-state input/output
capacitance
port off; VI = 3 V or 0 V; nOE =VCC
-6.0
-
pF
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