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参数资料
| 型号： | CD2320-B1800 |
| 厂商： | BOURNS INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode |
| 中文描述： | 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 519K |
| 代理商： | CD2320-B1800 |
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD2320-B1200~B11000 Surface Mount Bridge Rectifier Diode
Features
■
Lead free as standard
■
RoHS compliant*
■
Low power loss & high efficiency
■
High current capability
■
Low profile package
Applications
■
AC operated products
■
Computer monitors
■
Set top boxes
■
Cable modems
General Information
Electrical Characteristics (@ TA= 25
°
C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25
°
C Unless Otherwise Noted)
Notes:
1 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.
2 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas.
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Bridge Rectifier Diodes for rectification applications, in compact chip package 2320 size format, which offer PCB real estate
savings and are considerably smaller than most competitive parts. The Bridge Rectifier Diodes offer a forward current of 1 A with a choice of
repetitive peak reverse voltages between 200 V and 1000 V.
Parameter
Symbol
CD2320-B1200~B11000
Unit
Operating Temperature Range
T
J
-55 to +175
°C
Storage Temperature Range
T
STG
-55 to +175
°C
CD2320-
Parameter
Symbol
B1200
B1400
B1600
B1800
B11000
Unit
Maximum Repetitive
Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (TA= 55 °C)
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ= 25 °C)
DC Reverse Current @ Rated DC
Blocking Voltage (@TJ= 150 °C)
Typical Junction Capacitance
Maximum Instantaneous
Forward Voltage @ 1 A
Typical Thermal Resistance
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load (JEDEC Method)
VRRM
200
400
600
800
1000
V
VRMS
VDC
140
200
280
400
420
600
560
800
700
V
V
1000
I(AV)
1.0
A
IR
5
μA
IR
200
μA
1
CJ
25
pF
VF
1
V
2
R
θ
JL
110
°C/W
IFSM
30
A
*RHSCOMPIAN
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