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参数资料
| 型号： | CD821A |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
| 封装： | DIE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 285K |
| 代理商： | CD821A |
177
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
REVERSE LEAKAGE CURRENT
lR = 2 A @ 25°C & VR = 3 Vdc
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
-55° TO +100°
CDI
ZENER
MAXIMUM
VOLTAGE
EFFECTIVE
TYPE
VOLTAGE
TEST
ZENER
TEMPERATURE TEMPERATURE
NUMBER
CURRENT
IMPEDANCE
STABILITY
COEFFICIENT
V
ZT
@ I
ZT
I
ZT
Z
ZT
V
ZT
(Note 1)
(Note 2)
VOLTS
mA
OHMS
mV
% / °C
CD821
5.9 - 6.5
7.5
15
96
0.01
CD821A
5.9 - 6.5
7.5
10
96
0.01
CD823
5.9 - 6.5
7.5
15
48
0.005
CD823A
5.9 - 6.5
7.5
10
48
0.005
CD825
5.9 - 6.5
7.5
15
19
0.002
CD825A
5.9 - 6.5
7.5
10
19
0.002
CD826
5.9 - 6.5
7.5
15
20
0.002
CD827
5.9 - 6.5
7.5
15
9
0.001
CD827A
5.9 - 6.5
7.5
10
9
0.001
CD828
6.2 - 6.9
7.5
15
10
0.001
CD829
5.9 - 6.5
7.5
15
5
0.0005
CD829A
5.9 - 6.5
7.5
10
5
0.0005
NOTE 1
Zener impedance is derived by superimposing on l
ZT
A 60Hz rms a.c.
current equal to 10% of l
ZT.
NOTE 2
The maximum allowable change observed over the entire temperature
range i.e.,the diode voltage will not exceed the specified mV at any
discrete temperature between the established limits, per JEDEC
standard No.5.
Backside is not cathode
and must be electrically isolated
T = Metallization Test Pad
DESIGN DATA
METALLIZATION:
Top: C (Cathode) ..................Al
A (Anode) ..................... Al
Back: .......................................Au
AL THICKNESS.........25,000
Min
GOLD THICKNESS......4,000
Min
CHIP THICKNESS. ..............10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode must
be operated positive with respect
to anode.
TOLERANCES: ALL
Dimensions + 2 mils
1N821 THRU 1N829 AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/159
MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS
ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD821
thru
CD829A
22
MILS
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| CD821 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
| CD825A | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
| CD826 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
| CD827A | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
| CD829A | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CD8227GP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.5W×2双通道音频功率放大电路 =TA8227P |
| CD823 | 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
| CD823A | 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
| CD8246CZ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:6W×2双通道音频功率放大电路 =TA8246H |
| CD825 | 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS |
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