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参数资料
| 型号： | CDBA1200-HF |
| 厂商： | Comchip Technology |
| 文件页数： | 1/4页 |
| 文件大小： | 91K |
| 描述： | DIODE SCHOTTKY 200V 1A DO-214AC |
| 标准包装： | 5,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 150V |
| 电流 - 平均整流 (Io)： | 1A（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 900mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 200V |
| 电容@ Vr, F： | 120pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | DO-214AC（SMA） |
| 包装： | 带卷 (TR) |
       SMD Schottky Barrier Rectifiers Page 1 REV: B Features -Ultra high-speed switching. Mechanical data -Case: Molded plastic, DO-214AC / SMA -T erminals: solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -weight: 0.055 grams CDBA1150-HF Thru. CDBA1200-HF QW-JB023 Comchip Technology CO., LTD. -Low Profile surface mount applications in order to optimize board space. -Low power loss, high ef ficiency. -High current capability , low forward voltage drop. -High surge capability . -Guardring for overvoltage protection. -Epoxy: UL94-V0 rate flame retardant. -Silicon epitaxial planar chip,metal silicon junction. Reverse V oltage: 150 to 200 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Maximum Ratings and Electrical Characteristics Forward surge current Reverse Current Storage temperature A A mA Parameter Conditions on rate load (JEDEC method) 8.3ms single half sine-wave superimposed Forward rectified current see Fig.1 Thermal Resistance Diode Junction capacitance f=1MHZ and applied 4V DC reverse V oltage VR =V RRM TA=25°C VR =V RRM TA=100°C Junction to ambient Symbol IO IFSM IR RθJA CJ TSTG IR MIN. TYP . MAX. mA °C/W pF °C 1.0 30 0.5 20 88 120 -50 +175 Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . Units Max. Repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage CDBA 1150-HF Units Symbol Parameter VRRM VDC VRMS 150 150 105 V V V CDBA 1200-HF 200 200 140 Max. Instantaneous forward voltage @ 1.0A, TA=25°C VF 0.87 V 0.90 Operating Temperature TJ -50 to +175 °C Dimensions in inches and (millimeter) DO-214AC (SMA) 0.067 (1.70) 0.047 (1.20) 0.114 (2.90) 0.083 (2.10) 0.181 (4.60) 0.157 (4.00) 0.008(0.20) 0.004(0.10) 0.012 (0.30) TYP. 0.209 (5.30) 0.185 (4.70) 0.061 (1.55) 0.030 (0.75) 0.098 (2.50) 0.067 (1.70) |
相关PDF资料 |
PDF描述 |
|---|---|
| CDBA120L-G | DIODE SCHOTTKY 20V 1A DO-214AC |
| CDBA120LL-G | DIODE SCHOTTKY 20V 1A DO-214AC |
| CDBA140-HF | DIODE SCHOTTKY 40V 1A DO-214AC |
| CDBA140L-G | DIODE SCHOTTKY 40V 1A DO-214AC |
| CDBA140LL-G | DIODE SCHOTTKY 40V 1A DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CDBA1200LR-HF | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Low VF Low IR SMD Schottky Barrier Rectifiers |
| CDBA120-G | 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE 1A, 20V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBA120-G_12 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBA120GS | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifier |
| CDBA120-HF | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
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