参数资料
型号: CDBB1100-G
厂商: Comchip Technology
文件页数: 1/2页
文件大小: 56K
描述: DIODE SCHOTTKY 1A 100V DO-214AA
产品培训模块: Flat Chip Diodes
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 100V
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: DO-214AA(SMB)
包装: 标准包装
产品目录页面: 1572 (CN2011-ZH PDF)
其它名称: 641-1104-6
SMD
Schottky
Barrier
Rectifiers
Reverse V
oltage: 20 to 100 Volts
Forward Current: 1.0
Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Built-in strain relief.
-Low forward voltage drop.
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-T
erminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
CDBB120-G Thru. CDBB1100-G
Maximum Ratings and Electrical Characteristics
Dimensions
in
inches
and
(millimeter)
QW-BB004
CDBB
120-G
2
Notes: 1. Thermal resistance
fro
m junction to ambient and junction to lead mounted on P.C.B. with 0.2×0.2
inc
h copper pad
ar
ea.
Comchip Technology CO., LTD.
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
1.0A
OC
Max. DC reverse current at TA=25
O
C
rated DC blocking voltage TA=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CDBB
140-G
CDBB
160-G
CDBB
180-G
CDBB
1100-G
Units
Symbol
Parameter
VRRM
VDC
VRMS
IFSM
IO
VF
IR
RθJA
RθJL
TJ
TSTG
20
20
14
40
40
28
60
60
42
30
1.0
0.70
0.5
10
75
17
125
-65 to +150
80
80
56
100
100
70
V
V
V
A
A
V
mA
O
C/W
O
C
OC
0.50
0.85
DO-214AA
(SMB)
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
0.096(2.44)
0.083(2.13)
0.185(4.70)
0.160(4.06)
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