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| 型号： | CDBD8100-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 54K |
| 描述： | DIODE SCHOTTKY 100V 8A D2PAK |
| 标准包装： | 50 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 8A（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 850mV @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 5mA @ 100V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 管件 |
     Parameter Symbol Unit Maximum Recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Forward rectified current (See fig. 1) Maximum forward voltage at IO Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Reverse current at 25°C per leg (Note1) Maximum Reverse current at 100°C per leg (Note1) Page 1 QW-BB047 Chip Schottky Barrier Rectifier REV:A Comchip Technology CO., LTD. VRRM VRMS VDC IO VF IFSM IR TJ 60 42 60 8.0 0.75 175 5.0 50 100 70 100 V V V A V A mA °C 0.85 Operating temperature range Storage temperature range TSTG 4.0 °C -55 to +150 3 2=4 Dimensions in inches and ( millimeters) TO-263/D2PAK 0.413(10.50) 0.394(10.00) 0.114(5.30) 0.098(4.40) 0.370(9.40) 0.327(8.30) 0.059(1.50) 0.031(0.80) 0.205(5.20) 0.189(4.80) 0.063(1.60) 0.055(1.30) 0.024(0.60) 0.014(0.35) 0.055(1.40) 0.047(1.20) 0.185(4.70) 0.169(4.30) 0.106(2.70) 0.091(2.30) Reverse V oltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device CDBD8060-G Thru. CDBD8100-G a=25 OC, unless otherwise noted) Maximum Ratings (At T 8060-G CDBD 8100-G CDBD IR mA RθJC °C/W Typical Thermal resistance junction to case Per Leg -55 to +150 3 2 1 4 Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 Mechanical data - Polarity: As marked. -Weight:1.46 gram(approx.). - Weunting Position: Any Notes: 1. Pulse Test: 300μS pulse width, 1% duty cycle. - Case: TO-263/D2PAK, Transfer Molded. -Terminals: Solderable per MIL-STD-202, method 208. -Epoxy: U/L 94-V0 rate flame retardant. Comchip S M D D i o d e S p e c i a l i s t |
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相关代理商/技术参数 |
参数描述 |
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| CDBD8100-HF | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Chip Schottky Barrier Rectifier |
| CDBD835 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifier |
| CDBD835L | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifier |
| CDBER00340 | 功能描述:肖特基二极管与整流器 DFN 30mA 40V Sm. Sgnl. Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBER00340-HF | 功能描述:肖特基二极管与整流器 VR=40V, IO=30mA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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