- 您现在的位置：买卖IC网 > Datasheet目录126 > CDBFN140-HF (Comchip Technology)DIODE SCHOTTKY 40V 1.0A SOD323 Datasheet资料下载
参数资料
| 型号： | CDBFN140-HF |
| 厂商： | Comchip Technology |
| 文件页数： | 1/4页 |
| 文件大小： | 90K |
| 描述： | DIODE SCHOTTKY 40V 1.0A SOD323 |
| 标准包装： | 4,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 1A（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 40V |
| 电容@ Vr, F： | 120pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD |
| 供应商设备封装： | SOD-323 |
| 包装： | 带卷 (TR) |
      V oltage: 20 to 100 Volts Current: 1.0 Amp RoHS Device Page 1 REV:B CDBFN120-HF Thru CDBFN1100-HF Dimensions in inches and (millimeter) QW-JB001 SOD-323 SMD Schottky Barrier Rectifiers Comchip Technology CO., LTD. Parameter Symbol CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN 120-HF 130-HF 140-HF 150-HF 160-HF 180-HF 1100-HF Unit Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature VRRM VRMS VR VF IO IFSM IR RθJA CJ TJ TSTG 20 14 20 30 21 30 40 28 40 1.0 30 0.5 10 90 120 50 35 50 60 42 60 0.55 0.70 -55 to +125 -55 to +150 V V V V A A mA Note 1: f=1MHz and applied 4V DC reverse voltage. -65 to +175 Features - Batch process design, excellent powe Mechanical data -Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -W eight:0.008 gram(approx.). dissipation of fers better reverse leakage current. -Low profile surface mounted application in order to optimize board space. -Low power loss, high ef ficiency. -High current capability , low forward voltage dorp. -High surge capability . -Guardring for overvoltage protection. -V ery iny plastic SMD package. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 Reverse current on VR=VRRM @TA=25°C @TA=125°C pF °C °C °C/W Maximum Ratings (at TA=25°C unless otherwise noted) 80 56 80 100 70 100 0.85 0.012(0.3) Typ. 0.016(0.4) Typ. 0.016(0.4) Typ. 0.106 (2.70) 0.091 (2.30) 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) Halogen free |
相关PDF资料 |
PDF描述 |
|---|---|
| CDBFN160-HF | DIODE SCHOTTKY 60V 1.0A SOD323 |
| CDBFR00340 | DIODE SCHOTTKY SS 30MA 40V 1005 |
| CDBFR0140L | DIODE SCHOTTKY 100MA 40V 1005 |
| CDBFR0140R | DIODE SCHOTTKY 100MA 40V 1005 |
| CDBFR0230L | DIODE SCHOTTKY 200MA 30V 1005 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CDBFN150-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBFN150-HF | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBFN160-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBFN160-HF | 功能描述:肖特基二极管与整流器 VR=60V, IO=1A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBFN180-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
发布紧急采购，3分钟左右您将得到回复。