参数资料
型号: CDBM1100-G
厂商: Comchip Technology
文件页数: 1/4页
文件大小: 91K
描述: DIODE SCHOTTKY 1A 100V MINI-SMA
产品培训模块: Flat Chip Diodes
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 850mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 100V
安装类型: 表面贴装
封装/外壳: SOD-123F
供应商设备封装: 迷你型 SMA/SOD-123
包装: 标准包装
产品目录页面: 1572 (CN2011-ZH PDF)
其它名称: 641-1331-6
Reverse V
oltage: 20 to 150 Volts
Forward Current: 1.0
Amp
RoHS Device
Dimensions
in
inches
and
(millimeter)
CDBM120-G Thru. CDBM1150-G
Page 1
QW-BB005
SMD Schottky Barrier Rectifiers
REV:D
Comchip Technology CO., LTD.
Mini SMA/SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.122(2.80)
0.096(2.40)
0.067(1.70)
0.051(1.30)
0.035(0.90) Typ.
0.035(0.90) Typ.
Unit
CDBM
CDBM
160-G
CDBM
180-G
1100-G
CDBM
1150-G
14
20
30
21
30
60
42
60
30
0.5
10
98
120
80
56
80
150
105
150
130-G
Parameter
Symbol
CDBM
120-G
20
CDBM
100
70
100
CDBM
28
40
50
35
50
150-G
CDBM
140-G
40
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @IF=1.0A
Forward rectified current
VRRM
VRMS
VR
VF
IO
0.70
0.50
0.85
0.92
1.0
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
IFSM
IR
RθJA
CJ
TJ
TSTG
Reverse current on VR=VRRM
@TA=25°C
@TA=125°C
Note 1: f=1MHz and applied 4V DC reverse voltage.
-55 to +125
-55 to +150
-65 to +175
V
V
V
V
A
A
mA
pF
O
C
O
C
O
C/W
Maximum Ratings
(at TA=25°C unless otherwise noted)
Features
-Batch process design, excellent powe
Mechanical data
-Case:
Molded plastic, JEDEC Mini SMA/SOD-123.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-W
eight:0.027 gram(approx.).
dissipation of
fers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-T
iny plastic SMD package.
-Low power loss, high ef
ficiency.
-High current capability
, low forward voltage dorp.
-High surge capability
.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
相关PDF资料
PDF描述
CDBM1100-HF DIODE SCHOTTKY 100V 1.0A SOD123
CDBM140L-G DIODE SCHOTTKY 40V 1.0A SOD123
CDBM140L-HF DIODE SCHOTTKY 40V 1.0A SOD123
CDBM140LR-G DIODE SCHOTTKY 40V 1.0A SOD123F
CDBM240-G DIODE SCHOTTKY 2A 40V MINI-SMA
相关代理商/技术参数
参数描述
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CDBM1150-G 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers
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CDBM120-G 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel