参数资料
型号: CDBM220-HF
厂商: Comchip Technology
文件页数: 1/2页
文件大小: 56K
描述: DIODE SCHOTTKY 20V 2.0A SOD123
标准包装: 2,500
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 2A(DC)
电压 - 在 If 时为正向 (Vf)(最大): 500mV @ 2A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 20V
电容@ Vr, F: 160pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123T
供应商设备封装: 迷你型 SMA/SOD-123
包装: 带卷 (TR)
2100-HF
Unit
Reverse V
oltage: 20 to 100 Volts
Forward Current: 2.0
Amp
RoHS Device
Halogen free
Dimensions
in
inches
and
(millimeter)
CDBM220-HF Thru CDBM2100-HF
Page 1
QW-JB003
SMD Schottky Barrier Rectifiers
REV:A
Comchip Technology CO., LTD.
Mini SMA/SOD-123
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.067(1.7)
0.051(1.3)
0.035(0.9) Typ.
0.035(0.9) Typ.
CDBM
CDBM
240-HF
250-HF
260-HF
280-HF
CDBM
14
20
30
21
30
60
42
60
50
0.5
10
85
160
80
56
80
220-HF
230-HF
Features
Mechanical data
-Case:
Molded plastic, JEDEC MiniSMA/SOD-123.
-W
eight:0.027 gram(approx.).
-Batch process design, excellent powe
dissipation of
fers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-T
iny plastic SMD package.
-Low power loss, high ef
ficiency.
-High current capability
, low forward voltage dorp.
-High surge capability
.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
Parameter
Symbol
CDBM
20
CDBM
100
70
100
CDBM
28
40
50
35
50
CDBM
40
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @IF=2.0A
Forward rectified current
VRRM
VRMS
VR
VF
IO
0.70
0.50
0.85
2.0
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
IFSM
IR
RθJA
CJ
TJ
TSTG
Reverse current on VR=VRRM
@TA=25
O
C
@TA=125
O
C
Note 1: f=1MHz and applied 4V DC reverse voltage.
-55 to +125
-55 to +150
-65 to +175
V
V
V
V
A
A
mA
pF
O
C
O
C
O
C/W
Maximum Ratings
(at TA=25°C unless otherwise noted)
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