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| 型号： | CDBMH1100-HF |
| 厂商： | Comchip Technology |
| 文件页数： | 1/4页 |
| 文件大小： | 97K |
| 描述： | DIODE SCHOTKY 100V 1.0A SOD123T |
| 标准包装： | 2,500 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 850mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 200µA @ 100V |
| 电容@ Vr, F： | 120pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123T |
| 供应商设备封装： | SOD-123T |
| 包装： | 带卷 (TR) |
      T O A=25C unless otherwise noted) Maximum Ratings (at Parameter Symbol Unit Max. Repetitive peak reverse voltage Max. Continuous reverse voltage Max. RMS voltage Maximum Instantaneous forward voltage at IF=1.0A Max. Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) V R=VRRM TJ=25°C Max.Reverse current V R=VRRM TJ=100°C Typ. Thermal resistance (Junction to case) Typ. Diode Junction capacitance (Note 1) CDBMH120-HF Thru. CDBMH1150-HF Reverse V oltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Dimensions in inches and (millimeter) Page 1 QW-JB016 SMD Schottky Barrier Rectifiers REV:A Comchip Technology CO., LTD. SOD-123T 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.067(1.7) 0.051(1.3) 0.039(1.0) 0.094(2.4) VRRM VR VRMS IO VF IFSM IR RθJC CJ TJ CDBMH CDBMH 120-HF CDBMH 140-HF CDBMH CDBMH 160-HF CDBMH CDBMH 180-HF 1100-HF CDBMH 1150-HF 20 20 14 40 40 28 60 60 42 1.0 0.70 30 0.2 10 45 80 80 56 100 100 70 V V V A V A mA °C/W 0.50 0.85 Note : 1. F=1MHz and applied 4V DC reverse voltage Operating temperature Storage temperature range TSTG -65 to +175 °C -55 to +125 -55 to +150 120 pF 130-HF 30 30 21 150-HF 50 50 35 0.079(2.0) 0.024(0.6) 0.008(0.20) Typ. 0.044(1.10) 0.028(0.70) 0.035(0.9) 0.063(1.6) 0.047(1.2) 0.020(0.5) 0.037(0.95) 0.030(0.75) 0.051(1.3) 0.035(0.9) 0.024(0.6) Typ. IR 150 150 105 Max. averaged forward current (see fig.1) 0.92 °C Mechanical data -Case: Molded plastic, SOD-123T/Mini SMA. -T erminals: Solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -W eight: 0.018 grams approx. Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500/228 -Heat sink bottom. |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CDBMH1150-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBMH1150-HF | 功能描述:肖特基二极管与整流器 150V, 1A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBMH120-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
| CDBMH120-HF | 功能描述:肖特基二极管与整流器 20V, 1A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBMH130-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Rectifiers |
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