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| 型号： | CDBMTS280-HF |
| 厂商： | Comchip Technology |
| 文件页数： | 1/4页 |
| 文件大小： | 68K |
| 描述： | DIODE SCHOTTKY 80V 2.0A SOD123S |
| 标准包装： | 2,500 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 80V |
| 电流 - 平均整流 (Io)： | 2A（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 850mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 80V |
| 电容@ Vr, F： | 160pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123S |
| 供应商设备封装： | SOD-123S |
| 包装： | 带卷 (TR) |
     Parameter Symbol CDBMTS CDBMTS 220-HF 230-HF CDBMTS 2200-HF Unit Repetitive peak reverse voltage Continuous reverse voltage RMS voltage Maximum Forward rectified current Maximum forward voltage @ IF=2.0A Maximum forward surge current 8.3ms single half sine-wave superimposed on rated load Maximum reverse Current (VR=VRRM) TJ=25°C Reverse V oltage: 20 to 200 Volts Forward Current: 2.0 Amp RoHS Device Halogen Free Dimensions in inches and (millimeter) CDBMTS220-HF Thru. CDBMTS2200-HF Page 1 QW-JB031 Low Profile SMD Schottky Barrier Rectifiers Comchip REV: A Comchip Technology CO., LTD. SOD-123S VRRM VR VRMS IO VF IFSM IR CJ TJ CDBMTS CDBMTS 240-HF CDBMTS CDBMTS CDBMTS CDBMTS 260-HF 280-HF 2100-HF 2150-HF 20 20 14 40 40 28 60 60 42 2.0 0.70 50 0.5 20 80 80 56 100 100 70 V V V A V A mA °C 0.50 0.92 Operating temperature Storage temperature range TSTG -65 to +175 °C -55 to +125 -55 to +150 160 PF 30 30 21 250-HF 50 50 35 TJ=100°C Features Mechanical data -Case: Molded plastic, SOD-123S/MINI SMA -T erminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -W eight: 0.0155 grams approx. -Mounting Position: any -Epoxy: UL94-V0 rated flame retardant. -Low power loss,high ef ficiency. -High current capability,low forward voltage drop. -High surge capability . -Guarding for overvoltage protection. -Ultra high-speed switching. -Excellent power dissipation of fers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards SOD-123. -Silicon epitaxial planar chip,metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 150 105 150 200 140 200 (JEDEC methode) 0.85 Electrical Characteristics (at T A=25°C unless otherwise noted) Typical diode Junction capacitance (F=1MHz and applied 4V DC reverse voltage) 0.154(3.9) 0.138(3.5) 0.018(0.45) Typ. 0.079(2.0) 0.063(1.6) 0.041(1.05) 0.033(0.85) 0.032(0.8) Typ. 0.032(0.8) Typ. 0.037(0.95) 0.029(0.75) 0.119(3.0) 0.103(2.6) 0.009(0.22) 0.007(0.18) S M D D i o d e S p e c i a l i s t |
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相关代理商/技术参数 |
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| CDBN001A | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode |
| CDBN00340 | 制造商:Comchip Technology Corporation 功能描述: |
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| CDBN0145 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode |
| CDBN0230 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode |
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