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参数资料
| 型号： | CDBV6-54AD-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 70K |
| 描述： | DIODE SCHOTTKY 30V 0.2A SOT-363 |
| 标准包装： | 3,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电流 - 平均整流 (Io)（每个二极管）： | 200mA（DC） |
| 电压 - (Vr)（最大）： | 30V |
| 反向恢复时间(trr)： | 5ns |
| 二极管类型： | 肖特基 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 2 对共阳极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
CDBV6-54T/AD/CD/SD/BR-G
Features
-Low forward voltage drop.
-Fast switching.
-Ultra-small surface mount package.
-PN junction guard ring for transient and ESD
protection.
-A
vailable in lead Free version.
Mechanical data
-Case: SOT
-363, Molded Plastic
-Case material: UL
94V
-0 flammability retardant
classification.
-T
erminals: Solderable per MIL-STD-202, Method
208
-Marking: Orientation: See diagrams below
-W
eight: 0.006 grams (approx.)
-Marking: See diagrams below
Page 1
QW-BA015
SMD Schottky Barrier Diode Arrays
Forward Current: 0.2A
Reverse Voltage: 30V
RoHS Device
REV:A
Parameter
Symbol
Limits
Unit
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
SOT-363
Dimensions in inches and (millimeters)
DC blocking voltageW
Peak repetitive reverse voltageorking peak reverse voltage
Forward continuous current (Note 1)
Repetitive peak forward current (Note 1)
Forward surge current (Note 1) @t<1.0s
Power dissipation (Note 1)
Thermal resistance, junction to ambient air (Note 1)
Operation and storage temperature range
Reverse breakdown voltage (Note 2)
Forward voltage
Reverse leakage current (Note 2)
Total capacitance
Reverse recovery time
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
0.014(0.35)
0.006(0.15)
0.004(0.10)max
0.010(0.25)min
0.096(2.45)
0.085(2.15)
0.006(0.15)
0.003(0.08)
A1
C2
C2
C1
C1
A2
C1
A2
A2
A1
A1
C2
AC
1
C2
A2
A1
C1
AC
2
AC
1
C1
C2
A1
A2
AC
2
C1
C2
C3
A1
A2
A3
CDBV6-54CD-G*
Marking: KL7
CDBV6-54T-G
Marking: KLA
CDBV6-54AD-G*
Marking: KL6
CDBV6-54SD-G*
Marking: KL8
CDBV6-54BR-G
Marking: KLB
*Symmetrical configuration, no orientation indicator.
VVRRMVRWMR
IF
IFRM
IFSM
PD
RθJA
TJ, TSTG
30
200
300
600
200
625
-65 ~ +125
V
mA
mA
mA
mW
O
C/W
O
C
IR=100μA
I
I
I
I
IF=0.1mA
F=1mA
F=10mA
F=30mA
F=100mA
VR=25V
VR=1.0V, f=1.0MHz
IF=IR=10mA
to I
R=1.0mA, RL=100Ω
V(BR)R
VF
IR
CT
trr
30
1000
500
400
320
240
2
10
5
V
mV
μA
pF
nS
Notes:
1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch.
2. Short duration test pulse used to minimize self-heating ef
fect.
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CDBV6-54BR | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode Arrays |
| CDBV6-54BR-G | 功能描述:肖特基二极管与整流器 VR=30V, IO=200mA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBV6-54CD | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode Arrays |
| CDBV6-54CD-G | 功能描述:肖特基二极管与整流器 VR=30V, IO=200mA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| CDBV6-54SD | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Schottky Barrier Diode Arrays |
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