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参数资料
| 型号： | CDNBS08-SLVU2.8-4 |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY 4-LINE 2.8V 8SOIC |
| 产品培训模块： | ESD Protection Products |
| 产品目录绘图： | CDNBS08-SLVU2.8-4 Schematic |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 2.8V |
| 电压 - 击穿： | 3V |
| 功率（瓦特）： | 600W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 2378 (CN2011-ZH PDF) |
| 其它名称： | CDNBS08-SLVU2.8-4DKR |
Features
■ RoHS compliant*
■ Protects up to four I/O ports
■ Surge protection
■ ESD protection
Applications
■ Ethernet - 10/100 Base T
■ Personal digital assistants
■ LAN devices
■ Instrumentation
■ Low capacitance: 6 pF
CDNBS08-SLVU2.8-4 - Low Capacitance TVS Array
General Information
The markets of portable communications, computing and video equipment are challenging
the semiconductor industry to develop increasingly smaller electronic components.
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7
6
5
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and ESD
protection applications in an eight lead narrow body SOIC package size format. Bourns?
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their ?at con?guration minimizes roll away.
The Bourns ? device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
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2
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Electrical Characteristics (@ T A = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
Peak Pulse Current (t p = 8/20 μs)
Peak Pulse Power (t p = 8/20 μs) 1
Working Voltage
Breakdown Voltage @ 1 mA
I PP
P PP
V WM
V BR
3.0
30
600
2.8
A
W
V
V
Leakage Current @ V W M
Capacitance @ 0 V, 1 MHz
Snapback Voltage @ 50 mA
I D
C
2.8
0.1
6
1.0
μA
pF
V
ESD Protection per IEC 61000-4-2
Contact Discharge
Air Discharge
EFT Protection per IEC 61000-4-4 @ 5/50 ns
ESD
EFT
±8
±15
±30
±30
60
kV
A
Surge Protection per
@ I P = 5 A 2
V C
10
V
IEC 61000-4-5
Clamping Voltage
@ 8/20 μs
@ I P = 24 A 2
@ I PP = 30 A 2
V C
V C
13
15
15
21
V
V
Notes:
1. See Peak Pulse Power vs. Pulse Time.
2. Each differential line pair.
Thermal Characteristics (@ T A = 25 °C Unless Otherwise Noted)
Parameter
Junction Temperature Range
Storage Temperature Range
Symbol
T J
T STG
Min.
-55
-55
Nom.
+25
+25
Max.
+125
+150
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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| CDNBS08-SMDA05-6 | 功能描述:TVS二极管阵列 TVS ARRAY 5V SOD106 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS08-SR112 | 功能描述:TVS二极管阵列 Steering Diode Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS08-SR721 | 制造商:Bourns Inc 功能描述: |
| CDNBS08-SRDA05-4 | 功能描述:TVS二极管阵列 SO-8 5V 500W Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS08-SRDA05-6 | 功能描述:TVS二极管阵列 TVS Diode Array 5VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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