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参数资料
| 型号： | CDNBS08-USB6B |
| 厂商： | BOURNS INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | CDNBS08-USBxB Series - Steering Diode/TVS Array Combo |
| 中文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, SOIC-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 314K |
| 代理商： | CDNBS08-USB6B |
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDNBS08-USBxB Series - Steering Diode/TVS Array Combo
Features
■
Lead free as standard
■
RoHS compliant*
■
Protects 2 I/O ports
■
ESD protection > 40 KV
■
Low capacitance: 15 pF
Applications
■
Ethernet – 10/100 Base T
■
Computer I/O ports –
SCSI, FireWire & USB
■
Set-top box protection
■
Video cards
General Information
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Steering Diode/Transient Voltage Suppressor Array combination diodes
for surge and ESD protection applications in an 8 lead narrow body SOIC package
size format. Bourns
Chip Diodes conform to JEDEC standards, are easy to handle
on standard pick and place equipment and their flat configuration minimizes roll
away.
The Bourns
device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
Parameter
Symbol
Max.
Unit
Operating Temperature
T
J
-55 to +150
°C
Storage Temperature
T
STG
-55 to +150
°C
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Electrical specifications refer to Pins 1 to 4 or Pin 5 to Pin 8.
8
7
6
5
1
2
3
4
Parameter
Symbol
CDNBS08-
Unit
USB3B
4.0
USB6B
6.0
Breakdown Voltage @ 1 mA
V
BR
V
Working Peak Voltage
V
WM
3.3
5.25
V
Maximum Clamping Voltage VC@ IP
Maximum Clamping Voltage
@ 8/20 μs VC@ IPP
Maximum Leakage Current @ VWM
Maximum Cap Bidirectional
@ 0 V, 1 MHz
1
V
F
6.0
7.0
V
1
V
F
12.9 V
@ 37 A
13.2 V
@ 35 A
V
I
D
125
10
μA
C
j(SD)
15
pF
Peak Pulse Power (tp = 8/20 μs)
2
P
PP
500
W
*RHSCOMPIAN
相关PDF资料 |
PDF描述 |
|---|---|
| CDNBS16-T03 | CDNBS16-T03~T36C - TVS Diode Array Series |
| CDNBS16-T03C | CDNBS16-T03~T36C - TVS Diode Array Series |
| CDNBS16-T05 | CDNBS16-T03~T36C - TVS Diode Array Series |
| CDNBS16-T05C | CDNBS16-T03~T36C - TVS Diode Array Series |
| CDNBS16-T08 | CDNBS16-T03~T36C - TVS Diode Array Series |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CDNBS16-PLC05-6 | 功能描述:TVS二极管阵列 TVS Diode Array 5VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS16-T03 | 功能描述:TVS二极管阵列 TVS Diode Array 3VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS16-T03C | 功能描述:TVS二极管阵列 TVS Diode Array 3VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS16-T05 | 功能描述:TVS二极管阵列 TVS Diode Array 5VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDNBS16-T05C | 功能描述:TVS二极管阵列 TVS Diode Array 5VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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