参数资料
型号: CEFB102-G
厂商: Comchip Technology
文件页数: 1/2页
文件大小: 58K
描述: DIODE FAST 100V 1A DO-214AA
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 875mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 25ns
电流 - 在 Vr 时反向漏电: 5µA @ 100V
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: DO-214AA(SMB)
包装: 带卷 (TR)
SMD
Efficient
Fast
Recovery
Rectifiers
Reverse V
oltage: 50 to 600 Volts
Forward Current: 1.0
Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Super fast recovery time for high ef
ficient.
-Built-in strain relief.
-Low forward voltage drop.
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-T
erminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
CEFB101-G Thru. CEFB105-G
Maximum Ratings and Electrical Characteristics
Dimensions
in
inches
and
(millimeter)
DO-214AA
(SMB)
QW-BE003
CEFB101-G
CEFB102-G
CEFB103-G
CEFB104-G
per
2
pa
d area.
Notes: 1. Thermal resistance
fro
m junction to lead mounted on P.C.B. with 8.0×8.0
m
m cop
Comchip Technology CO., LTD.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
0.096(2.44)
0.083(2.13)
0.185(4.70)
0.160(4.06)
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
1.0A
Reverse recovery time
OC
Max. DC reverse current at TA=25
OC
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CEFB105-G
Units
Symbol
Parameter
VRRM
VDC
VRMS
IFSM
IO
VF
Trr
IR
RθJL
TJ
TSTG
50
50
35
100
100
70
0.875
25
200
200
140
30
1.0
5.0
200
13
150
-55 to +150
400
400
280
1.1
35
600
600
420
1.25
50
V
V
V
A
A
V
nS
μA
O
C/W
OC
O
C
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