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参数资料
| 型号： | CFD1025 |
| 厂商： | Continental Device India Limited |
| 英文描述： | NPN PLANAR POWER DARLINGTON TRANSISTOR |
| 中文描述： | NPN平面功率达林顿晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 118K |
| 代理商： | CFD1025 |
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN PLANAR POWER DARLINGTON TRANSISTOR
CFD1025
TO-220FP Fully Isolated
Plastic Package
Power Darlington for use in Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNIT
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current DC
IC
Collector Current Peak
ICP
Base Current DC
IB
Base Current Peak
IBP
Power Dissipation @ Tc=25C
PD
W
Junction Temperature
Tj
C
Storage Temperature
Tstg
C
THERMAL RESISTANCE
Junction to Case
Rth (j-c)
C/W
ELECTRICAL CHARACTERISTICS (Tc=25C)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
ICBO
VCB=200V, IE=0
0.1
mA
ICEO
VCE=150V, IB=0
0.1
mA
Emitter Cut Off Current
IEBO
VEB=7V, IC=0
5.0
mA
DC Current Gain
hFE
VCE=3V, IC=5A
1,500
30,000
Collector Emitter Saturation Voltage
VCE (sat)
IC=5A, IB=10mA
1.5
V
Base Emitter Saturation Voltage
VBE (sat)
IC=5A, IB=10mA
2.0
V
Transition frequency
fT
VCE=10V, IC=0.8A
50
MHz
SWITCHING TIME
Turn On Time
ton
2
s
Storage Time
ts
8
s
Fall Time
tf
5
s
CFD1025Rev 280104D
VALUE
200
150
7.0
8.0
A
12.0
0.5
A
1.0
Collector Cut Off Current
IB1=IB2=10mA, IC=5A,
RL=5, VBB2=4V
35
+150
-55 to +150
2.5
E
C
B
Continental Device India Limited
Data Sheet
Page 1 of 3
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