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| 型号： | CFK2062-P5 |
| 厂商： | MIMIX BROADBAND INC |
| 元件分类： | 放大器 |
| 英文描述： | 2.3 to 2.5 GHz + 30 dBm Power GaAs FET |
| 中文描述： | 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | SOP-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 556K |
| 代理商： | CFK2062-P5 |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFK2062-P5
Features
t High Gain
t +30 dBm Power Output
t Proprietary Power FET Process
t >40% Linear Power Added Efficiency
t Surface Mount SO-8 Power Package
Applications
t ISM Band Base Stations and Terminals
t RF ID/POS Base Stations
t Wireless Local Loop
Description
The CFK2062-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+30 dBm. The device is easily matched and provides excellent
linearity at 1 Watt. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
2.3 to 2.5 GHz
+30 dBm Power GaAs FET
Product Specifications
July 1997
(1 of 4)
1
3
4
7
8
6
5
2
G
D
Back Plane
is Source
GND
Package Diagram
Absolute Maximum Ratings
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
10V (3)
Gate-Source Voltage
VGS
-5V
Drain Current
IDS
Idss
Continuous Dissipation
PT
6W
Channel Temperature
TCH
175°C
Storage Temperature
TSTG
-65°C to +175°C
SO-8 Power Package Physical Dimensions
Notes:
1. Sum to two tones with 1 MHz spacing = 25 dBm.
2. See thermal considerations information on page 4.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 12V.
Parameters
Conditions
Min
Typ
Max
Units
Vd = 8V, Id = 400 mA (Quiescent)
P-1dB
30.0 31.0
—
dBm
SSG
12.0 13.0
—
dB
3rd Order
Products (1)
—
30
—
dBc
Efficiency
@ P1dB
—
40
—
%
Vd = 5V, Id = 600 mA (Quiescent)
P-1dB
—
30.5
—
dBm
SSG
—
12.0
—
dB
Specifications (TA = 25°C) The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.45 GHz.
Parameters
Conditions
Min
Typ
Max
Units
gm
Vds = 2.0V, Vgs = 0V
—
650
—
mS
Idss
Vds = 2.0V, Vgs = 0V
—
1.4
—
A
Vp
Vds = 3.0V, Ids = 25 mA
—
-1.8
Volts
BVGD
Igd = 2.5 mA
15
17
—
Volts
Θ
JL (2)
@150°C TCH
—
12
—
°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CFK2062-P5-000T | 制造商:MIMIX 制造商全称:MIMIX 功能描述:2.3 to 2.5 GHz + 30 dBm Power GaAs FET |
| CFK2162-P1 | 制造商:MIMIX 制造商全称:MIMIX 功能描述:0.8-1.0 GHz +34 dBm Power GaAs FET |
| CFK2162-P1_06 | 制造商:MIMIX 制造商全称:MIMIX 功能描述:800-900 MHz +34 dBm Power GaAs FET |
| CFK2162-P1_07 | 制造商:MIMIX 制造商全称:MIMIX 功能描述:0.8-1.0 GHz +34 dBm Power GaAs FET |
| CFK2162-P1-000T | 制造商:MIMIX 制造商全称:MIMIX 功能描述:0.8-1.0 GHz +34 dBm Power GaAs FET |
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