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参数资料
| 型号： | CFY25-17 |
| 厂商： | SIEMENS A G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | MICRO-X-4 |
| 文件页数： | 7/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-17 |
CFY25
Semiconductor Group
7 of 8
Draft D, Sep. 0000
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY25- (nnl) (ql)
(nnl):
Noise/Gain/Power Level
Quality Level
(ql):
Ordering Example:
Ordering Code: Q62703F119
CFY25-20P
For CFY25, Noise/Gain/Power Level 20P:
NF < 2.1dB, G
a
> 8.5 dB, P
1dB
> 14 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
-
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
++89 6362 4480
++89 6362 5568
martin.wimmers@siemens-scg.com
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
相关PDF资料 |
PDF描述 |
|---|---|
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY67 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-06 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-08 | HiRel K-Band GaAs Super Low Noise HEMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-20 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-20 (S) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-20P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 (P) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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