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参数资料
| 型号： | CFY25-20P |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| 中文描述： | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
| 文件页数： | 8/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-20P |
CFY25
Semiconductor Group
8 of 8
Draft D, Sep. 0000
Micro-X Package
Published by Siemens Semiconductors, High
Frequency Products Marketing, P.O.Box 801709, D-
81617 Munich.
Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and
shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany
or the Siemens Companies and Representatives
woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
相关PDF资料 |
PDF描述 |
|---|---|
| CFY25-23 | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-23 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 (P) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-23P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY27 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
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