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参数资料
| 型号： | CFY25-23 |
| 厂商： | SIEMENS A G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| 中文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | MICRO-X-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-23 |
CFY25
Semiconductor Group
2 of 8
Draft D, Sep. 0000
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
5
V
Drain-gate voltage
V
DG
7
V
Gate-source voltage (reverse / forward)
V
GS
- 5... + 0.5
V
Drain current
I
D
80
mA
Gate forward current
I
G
1.5
mA
RF Input Power, C- and X-Band
1)
P
RF,in
+ 17
dBm
Junction temperature
T
J
175
°
C
Storage temperature range
T
stg
- 65... + 175
°
C
Total power dissipation
2)
P
tot
250
mW
Soldering temperature
3)
T
sol
230
°C
Thermal Resistance
Junction-soldering point
R
th JS
≤
410
K/W
Notes.:
1) For V
DS
≤
3 V. For V
DS
> 3 V, derating is required.
2) At T
S
= + 72.5 °C. For T
S
> + 72.5 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
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| CFY67 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-06 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-08 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-08P | HiRel K-Band GaAs Super Low Noise HEMT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-23 (P) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-23P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY27 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-38 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
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