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参数资料
| 型号： | CFY25-23P |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| 中文描述： | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-23P |
CFY25
Semiconductor Group
3 of 8
Draft D, Sep. 0000
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 3 V, V
GS
= 0 V
I
Dss
15
30
60
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 1 mA
-V
Gth
0.3
1.0
3.0
V
Drain current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
I
Dp
-
< 100
-
μA
Gate leakage current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
-I
Gp
-
< 100
200
μA
Transconductance
V
DS
= 3 V, I
D
= 15 mA
g
m15
35
40
-
mS
Gate leakage current at operation
V
DS
= 3 V, I
D
= 15 mA
-I
G15
-
< 1
2
μA
Thermal resistance
junction to soldering point
R
th JS
-
370
-
K/W
相关PDF资料 |
PDF描述 |
|---|---|
| CFY25-P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY27 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-38 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY30 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
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