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| 型号： | CGA-6618Z |
| 英文描述： | Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier |
| 中文描述： | 双有线电视1 MHz到1000 MHz的高线性度砷化镓异质结双极晶体管放大器 |
| 文件页数： | 6/8页 |
| 文件大小： | 307K |
| 代理商： | CGA-6618Z |
6
CGA-6618 Dual GaAs HBT Amplifier
EDS-101994 Rev J
303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
Basic Application Schematic 50-870 MHz
Evaluation Board Layout 50-870 MHz
1
2
3
4
8
7
6
5
ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
RF OUTPUT
RF INPUT
.01uF
1000pF
68pF
220nH
220nH
68pF
1000pF
.01uF
1000pF
1000pF
1000pF
1000pF
Balun ETC1-1-13
Balun ETC1-1-13
Rbias
Rbias
1uF Tant.
1uF Tant.
CGA-6618
SOIC-08
1000 pF
0.01
μ
F
1000pF
68pF
V
s
R
BIAS
Amp 1
1000 pF
1000 pF
1000 pF
220 nH
Macom
ETC1-1-13
Macom
ETC1-1-13
1
μ
F Tant.
1
μ
F Tant.
0.01
μ
F
1000pF
68pF
220 nH
V
s
R
BIAS
Amp 2
1
4
8
5
6,7
2,3
PCB Recommendations
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
CGA-6618
CGA-6618Z
Recommended Bias Resistor Values for
I
=150mA
R
BIAS
=2 ( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
8 V
9 V
12 V
15 V
R
BIAS
33
47
82
120
Note: R
BIAS
provides DC bias stability over temperature.
Part Number
Reel Size
Devices/Reel
CGA-6618
7"
500
CGA-6618Z
7"
500
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Part Number Ordering Information
Part Identification Marking
Pin #
Function
Description
Device Pin Out
1
RF IN
Device 1
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in
the schematic.
2,3,6,7
Ground
Connection to ground. Use via holes for best performance to reduce lead inductance
as close to ground leads as possible.
4
RF IN
Device 2
Same as pin 1
5
RF OUT / Vcc
Device 2
RF output and bias pin. Bias should be supplied to this pin through an external series
resistor and RF choke inductor. Because DC biasing is present on this pin, a DC
blocking capacitor should be used in most applications (see application schematic). The
supply side of the bias network should be well bypassed.
8
RF OUT / Vcc
Device 1
Same as pin 5
EPAD
Ground
Exposed area on the bottom side of the package must be soldered to the ground plane
of the board for proper thermal and RF performance. Several vias should be located
under the EPAD as shown in the recommended land pattern on page 5.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGA6618ZSQ | 制造商:RF Micro Devices Inc 功能描述:IC AMP CATV HBT GAAS DUAL 8-SOIC |
| CGA6J2C0G1H223J | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 1210 0.022uF 50volts C0G 5% T=1.25mm RoHS:否 制造商:American Technical Ceramics (ATC) 电容:10 pF 容差:1 % 电压额定值:250 V 温度系数/代码:C0G (NP0) 外壳代码 - in:0505 外壳代码 - mm:1414 工作温度范围:- 55 C to + 125 C 产品:Low ESR MLCCs 封装:Reel |
| CGA6J2C0G1H223J125AA | 制造商:TDK 功能描述:CAP .022UF 50VDC C0G 5% SMD 1210 - Tape and Reel 制造商:TDK 功能描述:CAP CER 0.022UF 50V 5% NP0 1210 制造商:TDK CORPORATION OF AMERICA 功能描述:Case:C3225, T.C:C0G, Voltage:1H, Cap Value:223, Tol:J, Thickness:1.25, E series: 3 制造商:TDK CORPORATION OF AMERICA 功能描述:CASE:C3225, T.C:C0G, VOLTAGE:1H, CAP VALUE:223, TOL:J, THICKNESS:1.25 |
| CGA6J2C0G2A153J | 功能描述:多层陶瓷电容器MLCC - SMD/SMT 1210 0.015uF 100volt C0G 5% T=1.25mm RoHS:否 制造商:American Technical Ceramics (ATC) 电容:10 pF 容差:1 % 电压额定值:250 V 温度系数/代码:C0G (NP0) 外壳代码 - in:0505 外壳代码 - mm:1414 工作温度范围:- 55 C to + 125 C 产品:Low ESR MLCCs 封装:Reel |
| CGA6J2C0G2A153J125AA | 制造商:TDK Innoveta 功能描述:Cap Ceramic 0.015uF 250V C0G 5% SMD 1210 125C T/R 制造商:TDK Innoveta 功能描述:Cap Ceramic 0.015uF 100V C0G 5% SMD 1210 125C T/R 制造商:TDK 功能描述:CAP .015UF 100VDC C0G 5% SMD 1210 - Tape and Reel 制造商:TDK 功能描述:CAP CER 0.015UF 100V 5% NP0 1210 制造商:TDK 功能描述:CAPACITOR, 0.015UF, 1210, 100V, +/-5% 制造商:TDK CORPORATION OF AMERICA 功能描述:Case:C3225, T.C:C0G, Voltage:2A, Cap Value:153, Tol:J, Thickness:1.25, E series: 6 |
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