- 您现在的位置：买卖IC网 > PDF目录77241 > CGD1044H (NXP Semiconductors N.V.) Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies. PDF资料下载
参数资料
| 型号： | CGD1044H |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies. |
| 封装： | CGD1044H<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 1/8页 |
| 文件大小： | 201K |
| 代理商： | CGD1044H |
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
High output power capability
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Unconditionally stable
Thermal optimized design
1.3 Applications
CATV systems operating in the 40 MHz to 1000 MHz frequency range
1.4 Quick reference data
[1]
Direct Current (DC).
CGD1044H
1 GHz, 25 dB gain high output power doubler
Rev. 3 — 29 September 2010
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.
Quick reference data
Bandwidth to 1000 MHz; VB =24V (DC); Tmb =35 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 45 MHz
-
24.0
-
dB
f = 1000 MHz
24.0
25.0
26.0
dB
Itot
total current
[1] 430
450
470
mA
相关PDF资料 |
PDF描述 |
|---|---|
| CGD942C | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. |
| CGD944C | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies. |
| CGD982HCI | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
| CSBLA460KEC8-B0 | CERAMIC RESONATOR, 0.46 MHz |
| CSTCW25M0X51M-R0 | CERAMIC RESONATOR, 25 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CGD1044H,112 | 功能描述:射频放大器 CATV MODULES RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| CGD1044H_09 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 25 dB gain high output power doubler |
| CGD1044H112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| CGD1044HI | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 25 dB gain GaAs high output power doubler |
| CGD1044HI,112 | 功能描述:射频放大器 1GHz,25 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。