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参数资料
| 型号： | CGD1046HI |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 放大器 |
| 英文描述： | 1 GHz, 27 dB gain GaAs high output power doubler |
| 中文描述： | 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, SOT-115J, 7 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 215K |
| 代理商： | CGD1046HI |
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2]
Direct Current (DC).
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
Rev. 1 — 30 July 2010
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb =35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
f = 45 MHz
-
25.5 -
dB
f = 1003 MHz
26.5 27
28
dB
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
[1] -
75 65 dBc
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
[1] 57
63
-
dBc
Itot
total current
[2] -
450
465
mA
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