参数资料
型号: CGD942C
厂商: NXP Semiconductors N.V.
元件分类: 功率放大器
英文描述: Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies.
封装: CGD942C<SOT115J|<<<1<Always Pb-free,;
文件页数: 3/8页
文件大小: 202K
代理商: CGD942C
CGD942C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 29 September 2010
3 of 8
NXP Semiconductors
CGD942C
870 MHz, 23 dB gain power doubler amplifier
5.
Characteristics
[1]
Gp at 870 MHz minus Gp at 40 MHz.
[2]
Flatness straight line (peak to valley).
[3]
79 NTSC channels (55.25 MHz to 547.25 MHz, 48 dBmV output level) + 53 NTSC channels (553.25 MHz to 997.25 MHz, 38 dBmV
output level).
[4]
Vo =48dBmV.
[5]
Direct Current (DC).
Table 5.
Characteristics
Bandwidth to 870 MHz; VB = 24 V (DC); Tmb =35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 870 MHz
22
23
24
dB
SLsl
slope straight line
f = 40 MHz to 870 MHz
2dB
FL
flatness of frequency response
f = 40 MHz to 870 MHz
[2] -0.5
-dB
CTB
composite triple beat
79 + 53 flat NTSC channels
68
66
dBc
98 flat PAL channels
66
-
dBc
CSO
composite second-order distortion
79 + 53 flat NTSC channels
70
67
dBc
98 flat PAL channels
66
-
dBc
Xmod
cross modulation
79 + 53 flat NTSC channels
66
58
dB
RLin
input return loss
f = 40 MHz to 80 MHz
20
-
dB
f = 80 MHz to 160 MHz
19
-
dB
f = 160 MHz to 320 MHz
18
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
18
-
dB
RLout
output return loss
f = 40 MHz to 80 MHz
20
-
dB
f = 80 MHz to 160 MHz
19
-
dB
f = 160 MHz to 320 MHz
18
-
dB
f = 320 MHz to 640 MHz
18
-
dB
f = 640 MHz to 870 MHz
18
-
dB
NF
noise figure
f = 50 MHz
-
3.5
5.0
dB
f = 870 MHz
-
3.5
5.0
dB
Itot
total current
VB =24 V
450
-
mA
相关PDF资料
PDF描述
CGD944C Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CGD982HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CSBLA460KEC8-B0 CERAMIC RESONATOR, 0.46 MHz
CSTCW25M0X51M-R0 CERAMIC RESONATOR, 25 MHz
CSTCW70M0X-R1 CERAMIC RESONATOR, 70 MHz
相关代理商/技术参数
参数描述
CGD942C,112 功能描述:射频放大器 870 MHz, 23 dB gain pwr doubler amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
CGD944C 功能描述:射频放大器 SOT115 CATV MODULE RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
CGD944C,112 功能描述:射频放大器 870 MHz, 25 dB gain pwr doubler amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
CGD982HC,112 功能描述:IC AMP CATV PWR DOUBLER 8SIL 制造商:nxp semiconductors 系列:- 包装:管件 零件状态:过期 应用:CATV 输出类型:- 电路数:1 -3db 带宽:- 压摆率:- 电流 - 电源:440mA 电流 - 输出/通道:- 电压 - 电源,单/双(±):24V 安装类型:底座安装 封装/外壳:SOT-115J 供应商器件封装:8-SIL 标准包装:25
CGD982HCI,112 功能描述:射频放大器 1GHz 22 dB gain GaAs hi output pwr dblr RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel