参数资料
型号: CGH40045F-TB
厂商: Cree Inc
文件页数: 1/14页
文件大小: 1227K
描述: BOARD DEMO AMP CIRCUIT CGH40045
标准包装: 1
系列: GaN
类型: HEMT
频率: 0Hz ~ 4GHz
适用于相关产品: CGH40045F
已供物品:
产品目录页面: 558 (CN2011-ZH PDF)
相关产品: CGH40045F-ND - TRANS 45W RF GAN HEMT 440193 PKG
1
Subject to change without notice.
www.cree.com/rf
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40045, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF
and microwave applications. GaN HEMTs offer high effciency, high
gain and wide bandwidth capabilities making the CGH40045 ideal
for linear and compressed amplifer circuits. The transistor is
available in a fange and pill package.
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FEATURES
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Up to 4 GHz Operation
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16 dB Small Signal Gain at 2.0 GHz
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12 dB Small Signal Gain at 4.0 GHz
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55 W Typical PSAT
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55 % Effciency at PSAT
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28 V Operation
APPLICATIONS
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2-Way Private Radio
?
Broadband Amplifers
?
Cellular Infrastructure
?
Test Instrumentation
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Class A, AB, Linear amplifers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Package Types: 440193 & 440206
PN’s: CGH40045F & CGH40045P
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