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| 型号： | CGH40180PP-TB |
| 厂商： | Cree Inc |
| 文件页数： | 5/12页 |
| 文件大小： | 1717K |
| 描述： | BOARD DEMO AMP CIRCUIT CGH40180 |
| 标准包装： | 1 |
| 系列： | GaN |
| 类型： | HEMT |
| 频率： | 2.5GHz |
| 适用于相关产品： | CGH40180 |
| 已供物品： | 板 |
2
CGH40180PP Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Copyright ? 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25?C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25?C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25?C
Storage Temperature
TSTG
-65, +150
?C
Operating Junction Temperature
TJ
225
?C
Maximum Forward Gate Current
IGMAX
60
mA
25?C
Maximum Drain Current1
IDMAX
24
A
25?C
Soldering Temperature2
TS
245
?C
Screw Torque
τ
80
in-oz
Thermal Resistance, Junction to Case3
RθJC
0.9
?C/W
85?C
Case Operating Temperature3,4
TC
-40, +150
?C
30 seconds
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
www.cree.com/products/wireless_appnotes.asp
3
CGH40180PP at P
DISS
= 224 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC
= 25?C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS
= 10 V, I
D
= 57.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS
= 28 V, I
D
= 2.0 A
Saturated Drain Current2
IDS
46.4
56.0
–
A
VDS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS
= -8 V, I
D
= 57.6 mA
RF Characteristics3,4
(T
C
= 25
?C, F0
= 1.3 GHz unless otherwise noted)
Power Gain
PG
13
-
-
dB
VDD
= 28 V, I
DQ
= 2.0 A, P
OUT
= P
SAT
Small Signal Gain
GSS
-
19
–
dB
VDD
= 28 V, I
DQ
= 2.0 A
Power Output at Saturation5
PSAT
180
220
–
W
VDD
= 28 V, I
DQ
= 2.0 A
Drain Effciency6
η
56
65
–
%
VDD
= 28 V, I
DQ
= 2.0 A, P
OUT
= P
SAT
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD
= 28 V, I
DQ
= 2.0 A,
POUT
= 180 W CW
Dynamic Characteristics7
Input Capacitance
CGS
–
35.7
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
CDS
–
9.6
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3 Measured in CGH40180PP-TB, including all coupler losses.
4
I
DQ
of 2.0 A is by biasing each device at 1.0 A.
P
SAT
is defned as: Q1 or Q2 = I
G
= 2.8 mA.
Drain Effciency = P
OUT
/ P
DC
5
6
7
Capacitance values are for each side of the device.
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