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参数资料
| 型号： | CGH55015F-TB |
| 厂商： | Cree Inc |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO AMP CIRCUIT CGH55015F |
| 标准包装： | 1 |
| 类型： | 放大器 |
| 频率： | 5.5GHz ~ 5.8GHz |
| 适用于相关产品： | CGH55015F（不含 GaN HEMT） |
| 已供物品： | 裸板 |
Absolute Maximum Ratings (not simultaneous) at 25?C Case Temperature
Soldering Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current 1
2
Screw Torque
Thermal Resistance, Junction to Case 3
Case Operating Temperature 3
Symbol
V DSS
V GS
P DISS
T STG
T J
I GMAX
I DMAX
T S
τ
R θ JC
T C
Rating
84
-10, +2
7
-65, +150
225
4.0
1.5
245
60
8.0
-40, +150
Units
Volts
Volts
Watts
?C
?C
mA
A
?C
in-oz
?C/W
?C
Conditions
25?C
25?C
25?C
25?C
85?C
30 seconds
Note:
1
2
3
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Measured for the CGH55015 at P DISS = 7W.
Electrical Characteristics (T C = 25?C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics 1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
V GS(th)
V GS(Q)
I DS
V BR
-3.8
–
2.9
120
-3.0
-2.7
3.5
–
-2.3
–
–
–
V DC
V DC
A
V DC
V DS = 10 V, I D = 3.6 mA
V DS = 28 V, I D = 115 mA
V DS = 6.0 V, V GS = 2.0 V
V GS = -8 V, I D = 3.6 mA
RF Characteristics
2,3
(T C = 25 ? C, F 0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
Drain Efficiency 4
Error Vector Magnitude
G SS
η
EVM
8.5
20.6
–
11.0
25
2.0
–
–
2.5
dB
%
%
V DD = 28 V, I DQ = 115 mA
V DD = 28 V, I DQ = 115 mA, P AVE = 2.0 W
V DD = 28 V, I DQ = 115 mA, P AVE = 2.0 W
No damage at all phase angles,
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
V DD = 28 V, I DQ = 115 mA,
P AVE = 2.0 W
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
C GS
C DS
C GD
–
–
–
4.5
1.3
0.2
–
–
–
pF
pF
pF
V DS = 28 V, V gs = -8 V, f = 1 MHz
V DS = 28 V, V gs = -8 V, f = 1 MHz
V DS = 28 V, V gs = -8 V, f = 1 MHz
Notes:
1
2
3
Measured on wafer prior to packaging.
Measured in the CGH55015-TB test fixture.
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type
RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = P OUT / P DC .
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
2 CGH55015F1_P1 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
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