参数资料
型号: CGY1047
厂商: NXP SEMICONDUCTORS
元件分类: 放大器
英文描述: 1 GHz, 27 dB gain GaAs push-pull amplifier
中文描述: 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: ROHS COMPLIANT, SOT-115J, 7 PIN
文件页数: 1/8页
文件大小: 84K
代理商: CGY1047
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity, stability and reliability
Extremely low noise
Excellent return loss properties
Rugged construction
Unconditionally stable
Thermally optimized design
Superior levels of ESD protection
Compliant with Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1]
79 NTSC channels [f = 55.25 MHz to 547.25 MHz] + 75 digital channels [f = 547.25 MHz to 1003 MHz]
(
6 dB offset); flat out level.
[2]
Direct Current (DC).
CGY1047
1 GHz, 27 dB gain GaAs push-pull amplifier
Rev. 2 — 29 September 2010
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 ; Tmb =35 C; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 45 MHz
25.0
-
27.0
dB
f = 1003 MHz
27.0
27.75
28.5
dB
CTB
composite triple beat
Vo = 44 dBmV
64
-
dBc
CCN
carrier-to-composite noise
Vo = 44 dBmV
[1] -65
-
dBc
Itot
total current
[2] 230
250
270
mA
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