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参数资料
| 型号： | CGY184 |
| 厂商： | SIEMENS A G |
| 元件分类： | 衰减器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
| 中文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件页数： | 3/14页 |
| 文件大小： | 141K |
| 代理商： | CGY184 |
CGY 184
Siemens Aktiengesellschaft
Semiconductor Group
3
3
23.07.97
HL HF PE GaAs
Electrical characteristics
(TA
= 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.5V, Vaux=3.5V, Vcontrol=2.5V, unless
otherwise specified; pulsed with a duty cycle of 12.5%, ton=577usec)
Characteristics
Symbol
min
typ
max
Unit
Supply current
V
D
=3.5V; P
in
=0dBm
IDD
-
1.67
-
A
Supply current neg. voltage gener.
V
aux
=3.5V
Iaux
-
10
-
mA
Control Current
I
C
2
3
mA
Shut-off current
( Vc=0V, V
D
=3.5V, no RF- drive )
I
D
40
μ
A
Small signal gain
P
in
=-10dBm
G
-
40
-
dB
Power gain
V
D
=3.5V; Pin=0dBm
Output Power
V
D
=3.5V; Pin=0dBm
Power gain
V
D
=3.5V; P
in
=0dBm, T=85°C
G
-
34
-
dB
Po
-
34
-
dBm
G
-
33.7
-
dB
Output Power
V
D
=3.5V; Pin=0dBm, T=85°C
Overall Power added Efficiency
V
D
=3.5V; ; V
C
=2.5V; Pin=0dBm
Dynamic range (P
out,max
-P
out,min
)
V
C
= 0.5....2.5V
Po
-
33.7
-
dBm
-
43
-
%
-
80
-
dB
Harmonics
V
C
=2.2V, P
in
=0dBm
2f
0
3f
0
-
-
-60
-40
-
-
dBc
RX-Noise Power
V
C
=2.2V; P
in
=0dBm ;
f
RX
=1.805....1.88GHz
-
-80
-
dBm/
100kHz
Input VSWR
V
D
=3.5V
-
-
1.8 : 1
-
-
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